AC Photovoltaic Measurement of Charge Density Uniformity in Silicon Nitride Film Deposited on Si Wafer
スポンサーリンク
概要
- 論文の詳細を見る
Charge density uniformities in an as-deposited silicon nitride film are evaluated using an ac photovoltaic method. The experimental results for photovoltages as a function of the thickness of a silicon nitride film showed that the net charge in silicon nitride is positive, and a negative charge is located near the interface between the silicon nitride and the ultrathin oxide on the silicon substrate. The photovoltages also greatly varied when the gas flow ratio of NH_3 to SiH_2Cl_2 is changed from 5 to 50 while keeping the thickness constant. The ac photovoltaic measurement revealed a charge density inhomogeneity of 8-nm-thick silicon nitride films, which is attributed to local variations of the gas flow ratio.
- 社団法人応用物理学会の論文
- 1993-11-15
著者
-
Kato H
Photon Factory High Energy Accelerator Research Organization
-
Kato Hiroo
Institute Of Material Structure Science High Energy Accelerator Research Organization
-
Kato Hiromichi
Department Of Materials Science And Engineering Nagoya Institute Of Technology
-
Kato Hisayuki
Semiconductor Design & Development Center Hitachi Ltd.
-
HONMA Noriaki
Central Research Laboratory, Hitachi, Ltd.
-
Kato H
Department Of Mechanical And Intelligent Engineering Graduate School Of Engineering Utsunomiya Unive
-
Honma N
Central Research Laboratory Hitachi Ltd.
-
Honma Noriaki
Central Research Laboratory Hitachi Lid.
関連論文
- Tailoring Thermally Induced Nano-Quasicrystallization and Deformation-Assisted Nanocrystallization for Mechanical Property Improvement in Zr-Al-Ni-Cu-Pd Bulk Metallic Glasses
- Mechanical Property and Corrosion Resistance Evaluations of Ti-6Al-7Nb Alloy Brazed with Bulk Metallic Glasses
- Deformation-Induced Nanoscale Dynamic Transformation Studies in Zr-Al-Ni-Pd and Zr-Al-Ni-Cu Bulk Metallic Glasses
- Origin of the Effect of the Gas Atmosphere during Mold-Casting Zr_Al_Ni_Pd_ Bulk Glassy or Nano-Quasicrystal-Forming Alloy
- Characteristics of Shear Bands and Fracture Surfaces of Zr_Al_Ni_Pd_ Bulk Metallic Glass
- Influence of In-Situ Nanoprecipitation on Constant Load Deformation in the Glass Transition Region of a Cu_Zr_Ti_ Bulk Metallic Glass
- Microforming of Bulk Metallic Glasses : Constitutive Modelling and Applications
- Nanoporous Surfaces of FeAl Formed by Vacancy Clustering
- Strengthening Mechanisms in Al-Based and Zr-Based Amorphous Nanocomposites
- Heat of Evolution and Non-Newtonian Viscous Flow of Pd_Ni_P_ Glassy Alloy
- Crystallization of Zr_Al_Ni_5Cu_ Bulk Metallic Glass Composites Containing ZrC Particles
- Synthesis and Mechanical Properties of Zr_Al_Ni_5Cu_ Bulk Glass Composites Containing ZrC Particles Formed by the In-Situ Reaction
- Growth Mode and Characteristics of the O_2-Oxidized Si(100) Surface Oxide Layer Observed by Real Time Photoemission Measurement
- Microscopic Investigation of Al_Ga_N on Sapphire
- Simplified AC Photovoltaic Measurermemt of Minority Carrier Lifetime in Czochralski-Grown Silicon Wafers Having Ring-Distributed Stacking Faults
- Observation of Ring-Distributed Microdefects in Czochralski-Grown Silicon Wafers with a Scanning Photon Microscope and Its Diagnostic Application to Device Processing
- Comparison of Minority Carrier Lifetimes Measured by Photoconductive Decay and ac Photovoltaic Method : Techniques, Instrumentations and Measurement
- Nondestructive Observations of Surface Flaws and Contaminations in Silicon Wafers by Means of a Scanning Photon Microscope : Semiconductors and Semiconductor Devices
- Calibration of Minority Carrier Lifetimes Measured with an ac Photovoltaic Method : Techniques, Instrumentations and Measurement
- Atomic-Scale Characterization of Elastic Deformation of Zr-Based Metallic Glass under Tensile Stress
- Improvement of Plasticity in Pd Containing Zr-Al-Ni-Cu Bulk Metallic Glass by Deformation-Induced Nano Structure Change
- In Situ Observation of Photon-Stimulated Hydrogen Removal on a HF-Passivated Si(111) Surface by Ultraviolet Photoelectron Spectroscopy Using Synchrotron Radiation
- Low-Temperature Cleaning of HF-Passivated Si(111) Surface with VUV Light
- Structural Properties of Al_In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
- GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
- Photoluminescence Analysis of plasma-deposited Oxygen-rich Silicon oxynitride Films
- Effect of Ozone Annealing on the Charge Trapping Property of Ta_2O_5-Si_3N_4-p-Si Capacitor Grown by Low-pressure Chemical Vapor Deposition
- Microwave Dielectric Properties of the Ba_(Sm_, R_y)_Ti_O_(R=Nd and La) Solid Solutions with Zero Temperature Coefficient of the Resonant Frequency
- Microwave Dielectric Properties and Structure of the Ba_Sm_Ti_O_ Solid Solutions
- Nondestructive Measurement of Minority Carrier Lifetimes in Si Wafers Using Frequency Dependence of ac Photovoltages
- Measurement of Minority Carrier Lifetimes using AC Photovoltages Excited by Two Photon Beams of Different Wavelengths
- A Non-Destructive Method for Measuring Lifetimes for Minority Carriers in Semiconductor Wafers Using Frequency-Dependent ac Photovoltages
- A Photovoltaic Method for Evaluating Junction Characteristics Using Cut-Off Frequency
- Ac Surface Photovoltages in p-Type Silicon Wafers Oxidized in Water-Free and Wet Ambients
- Ac Surface Photovoltages in Strongly-Inverted Oxidized p-Type Silicon Wafers^*
- AC Photovoltaic Measurement of Charge Density Uniformity in Silicon Nitride Film Deposited on Si Wafer
- Quantum Effect on Helium Adsorbed in Y Zeolite : I. QUANTUM LIQUIDS AND SOLIDS : He in Restricted Geometry
- Determination of Surface Charge and Interface Trap Densities in Naturally Oxidized n-Type Si wafers Using ae Surface Photovoltages
- Sample Thickness Dependence of Minority Carrier Lifetimes Measured Using an ac Photovoltaic Method
- Frequency-Dependent Photovoltage-Generating Areas in a Strongly-Inverted Oxidized p-Type Silicon Wafer
- Excitation-Power-Density Dependent ac Surface Photovoltages in Radiation-Damaged Si Wafer
- Non-Destructive Method for Measuring Cut-Off Frequency of a p-n Junction with a Chopped Photon Beam
- The Rapid Synthesis of High Purity [^F]Butyrophenone Neuroleptics from Nitro Precursors for PET Study
- Microstructure Refinement and Texture Evolution of Titanium by Friction Roll Surface Processing
- Microstructural and Textural Evolution by Continuous Cyclic Bending and Annealing in a High Purity Titanium
- Improvement of Fatigue Properties by Means of Continuous Cyclic Bending and Annealing in an Al-Mg-Mn Alloy Sheet
- Deformation and Fracture at High Temperatures in an Al-Mg-Mn Alloy Sheet Consisting of Coarse- and Fine-Grained Layers
- Effect of Surface Microstructure of Titanium Sheet on the Photocatalytic Activity of Its Oxide Film
- Saturation of ac Surface Photovoltages due to Photocapacitances in a Strongly-Inverted Oxidized p-Type Silicon Wafer
- PH_3 Concentration Measurements by Vacuum Ultraviolet Absorption Spectroscopy
- Effects of Dipping in an Aqueous Hydrofluoric Acid Solution before Oxidation on Minority Carrier Lifetimes in p-Type Silicon Wafers
- Contribution of Thermal SiO2 Layers on Si Wafer Back Surfaces to Photoconductive Decay Time Measured with Microwave Reflection from Front Surfaces