Comparison of Minority Carrier Lifetimes Measured by Photoconductive Decay and ac Photovoltaic Method : Techniques, Instrumentations and Measurement
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-08-20
著者
-
Shimizu H
Nihon Kesso Koogaku Co. Ltd. Gunma Jpn
-
HONMA Noriaki
Central Research Laboratory, Hitachi, Ltd.
-
MUNAKATA Chusuke
Central Research Laboratory, Hitachi, Ltd.
-
SHIMIZU Hirofumi
Kofu Branch, Musashi Works, Hitachi Ltd.,
-
Shimizu Hirofumi
High-technology Research Center And Faculty Of Engineering Kansai University
-
Shimizu Hirofumi
Semiconductor And Integrated Circuits Division Hitachi Ltd.
-
Shimizu H
High-technology Research Center And Faculty Of Engineering Kansai University
-
Honma N
Central Research Laboratory Hitachi Ltd.
-
Honma Noriaki
Central Research Laboratory Hitachi Lid.
-
Munakata C
Tohoku Inst. Technol. Sendai Jpn
-
Munakata Chusuke
Central Research Laboratory Hitachi Lid.
-
Shimizu Hirofumi
Kofu Branch Musashi Works Of Hitachi Ltd
-
Munakata Chusuke
Central Res. Lab. Hitachi Ltd.
関連論文
- Superconducting Properties of Ba-Y-Cu-O Tape Prepared by the Doctor Blade Process : Electrical Properties of Condensed Matter
- Magnetic Properties and Upper Critical Fields of Sintered Tl-Ca-Ba-Cu-O Supercouiductors : Electrical Properties of Condensed Matter
- Upper Critical Field of New Oxide Superconductor Bi-Sr-Ca-Cu-O : Electrical Properties of Condensed Matter
- Simplified AC Photovoltaic Measurermemt of Minority Carrier Lifetime in Czochralski-Grown Silicon Wafers Having Ring-Distributed Stacking Faults
- Observation of Ring-Distributed Microdefects in Czochralski-Grown Silicon Wafers with a Scanning Photon Microscope and Its Diagnostic Application to Device Processing
- Comparison of Minority Carrier Lifetimes Measured by Photoconductive Decay and ac Photovoltaic Method : Techniques, Instrumentations and Measurement
- Nondestructive Observations of Surface Flaws and Contaminations in Silicon Wafers by Means of a Scanning Photon Microscope : Semiconductors and Semiconductor Devices
- Calibration of Minority Carrier Lifetimes Measured with an ac Photovoltaic Method : Techniques, Instrumentations and Measurement
- Sensitivity of Ion-Imaging Method and Mass Analysis using an Imaging Detector
- Direct Estimation of the Ionization Region for XHV Measurement by Laser Ionization
- Pressure Measurement by Photoelectron Counting
- Pressure Measurement in XHV Region Using Nonresonant Multiphoton Ionization by Picosecond Pulsed Laser
- Excimer Laser Ablation of Cryogenic NO_2 Films
- Direct Imaging of Spatial Distribution of Ions Generated by Nonresonant Multiphoton Ionization of H_2 Gas
- Preliminary Pressure Measurement in the Range of 10^ Pa Using a Picosecond Pulsed Laser
- Nonresonant Multiphoton Ionization of H_2, CO and CO_2 by Second Harmonics of Picosecond YAG Laser
- Measurement of Extreme-High-Vacuum Pressure by Laser Ionization
- Multiphoton Ionization of Xe and Kr Atoms by an ArF Excimer Laser
- A New Ion Counting System Devised for Mass-Selective Detection of Sputtered Neutrals in Laser SNMS
- Nonresonant Multiphoton Ionization of He and Ne Atoms
- Dependence of the Nonresonant Laser Ionization of Rare Gases on Laser Wavelength
- Detection of Sputtered Neutral Atoms by Nonresonant Multiphoton Ionization : Surfaces, Interfaces and Films
- Preliminary Results of Vacuum Pressure Measurement by Laser Ionization Method
- Tape Conductor Fabrication Process for High-T_c Ba_2YCu_3O_ : Electrical Properties of Condensed Matter
- Excellence of Gate Oxide Integrity in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits Based on P^-/P^- Thin-Film Epitaxial Silicon Wafers
- Dependence of Warpage of Czochralski-Grown Silicon Wafers on Oxygen Concentration and Its Application to MOS Image-Sensor Device
- Estimation of Epitaxial Temperature Using X-Ray Diffraction for Si Films Grown on (100) Si by Molecular Beam Epitaxy
- X-Ray Diffraction from Low-Temperature-Grown Silicon Films with Small Surface Roughness
- Distortion of Electron-Beam-Recorded Patterns on a Photographic Plate due to Charge-Up
- Main Cause of Surface Waveguides Formed under LiNbO_3 Crystal Surface during Thermal Treatment
- Adsorption and Thermal or Photodecomposition of Triethylgallium and Trimethylgallium on Si(111)-7×7
- Prevention of Thermal Degradations by Using Dehydrated LiNbO_3 Crystal
- Analysis of the Thickness Edge Mode in Piezoelectric Plates and Its Application to Resonators
- Photochemical Decomposition of Triethylgallium on Si(111) Studied by Means of STM, LEED, AES and Mass Spectroscopy
- Oxidation-Induced Stacking Faults Dependent on Oxygen Concentration in Czochralski-Growrn Silicon Wafers
- Emittance Measurement of High-Brightness Microbeams
- A Method of Measuring Lifetime for Minority Carriers Induced by an Electron Beam in Germanium
- Optimum Electrode Design for Effective Excitation of the Edge Mode by Taking Account of Its Electric Potential Distribution : SAW and Communication Device
- Gold Substrates for Scanning Tunneling Microscopy of Adsorbed Species
- Nondestructive Measurement of Minority Carrier Lifetimes in Si Wafers Using Frequency Dependence of ac Photovoltages
- Measurement of Minority Carrier Lifetimes using AC Photovoltages Excited by Two Photon Beams of Different Wavelengths
- A Non-Destructive Method for Measuring Lifetimes for Minority Carriers in Semiconductor Wafers Using Frequency-Dependent ac Photovoltages
- A Photovoltaic Method for Evaluating Junction Characteristics Using Cut-Off Frequency
- Ac Surface Photovoltages in p-Type Silicon Wafers Oxidized in Water-Free and Wet Ambients
- Ac Surface Photovoltages in Strongly-Inverted Oxidized p-Type Silicon Wafers^*
- AC Photovoltaic Measurement of Charge Density Uniformity in Silicon Nitride Film Deposited on Si Wafer
- Fine Chromium Grating Directly Made by Irradiating Electron Beam
- Determination of Surface Charge and Interface Trap Densities in Naturally Oxidized n-Type Si wafers Using ae Surface Photovoltages
- Sample Thickness Dependence of Minority Carrier Lifetimes Measured Using an ac Photovoltaic Method
- Frequency-Dependent Photovoltage-Generating Areas in a Strongly-Inverted Oxidized p-Type Silicon Wafer
- Electron Beam Enhanced Surface Photovoltage
- Excitation-Power-Density Dependent ac Surface Photovoltages in Radiation-Damaged Si Wafer
- Non-Destructive Method for Measuring Cut-Off Frequency of a p-n Junction with a Chopped Photon Beam
- Confirmation of Aluminum-Induced Negative Charge in Thermally Oxidized Silicon Wafers Using AC Surface Photovoltage Method
- Effect of Aluminum on Ac Surface Photovoltages in Thermally Oxidized n-Type Silicon Wafers
- Thermal Warping of Large Diameter Czochralski-Grown Silicon Wafers : Semiconductors and Semiconductor Devices
- Change of Apparent Sensitivity of an Electron Resist Due to Backing Materials
- Characterization of Damaged Layer Using AC Surface Photovoltage in Silicon Wafers
- A Novel Method of Electron Beam Recording on a Si Wafer
- Warpage of Czochralski-Grown Silicon Wafers as Affected by Oxygen Precipitation
- Nondestructive Diagnostic Method Using AC Surface Photovoltage in Silicon Wafers Rinsed with Metal-Contaminated Water Solutions
- Confirmation of Aluminum-Induced Negative Charge in Native Silicon Dioxide
- Monitoring of Ultra-Trace Contaminants on Silicon Wafers for ULSI by a Novel Impurity Extraction and AC Surface Photovoltage Methods
- Observation of p-n Junctions with a Flying-Spot Scanner Using a Chopped Photon Beam
- Analysis of ac Surface Photovoltages in a Depleted Oxidized p-Type Silicon Wafer
- Saturation of ac Surface Photovoltages due to Photocapacitances in a Strongly-Inverted Oxidized p-Type Silicon Wafer
- PH_3 Concentration Measurements by Vacuum Ultraviolet Absorption Spectroscopy
- Analysis of Trapezoid Distortion due to Charge-Up in Electron Beam Recording
- Voltage Signal due to Electron-Beam-Induced Conductivity in Semiconductors
- Die Verteilung des durch einen Elektronenstrahl ionisierten Ionenstromes im Elektronenstrahl-Apparate
- Measurement of Potential Distribution in a Semiconductor Crystal with an Electron Beam
- Detection of Resistivity Striations in a Ge Crystal with an Electron Beam
- On the Voltage Induced by an Electron Beam in a Bulk Semiconductor Crystal
- A Scanning Electron Microscopic Method of Obtaining Electric Field Distributions Using Solid-State Models
- A Failure Analysis of a Gunn Diode with a Scanning Electron Microscope
- Frequency Response of the Strong Inversion Layer in a Silicon Wafer
- The Photovoltaic Observation of a Non-Conductive Layer due to BN Formed in a Boron Implanted Si Junction
- Analysis of ac Surface Photovoltages in Accumulation Region : Optical Properties of Condensed Matter
- Non-Destructive Method of Observing Inhomogeneities in p-n Junctions with a Chopped Photon Beam
- An Electron Beam Method of Measuring Resistivity Distribution in Semiconductors
- Measurement of Resistance by Means of Electron Beam -III-
- Measurement of Resistance by Means of Electron Beam -II-
- Bulk Electron Voltaic Effect
- A Very Low Electron Temperature Mercury Plasma
- Density Distribution of a Mercury Plasma near an Anchored Cathode Spot
- Measurement of the Homogenity of a Semiconductor with an Electron Beam
- AC Photovoltaic Images of Thermally Oxidized P-Type Silicon Wafers Contaminated with Metals
- Observations of Sand-Blasted Surface of Germanium with a Scanning Electron Microscope
- Effects of Dipping in an Aqueous Hydrofluoric Acid Solution before Oxidation on Minority Carrier Lifetimes in p-Type Silicon Wafers
- Contribution of Thermal SiO2 Layers on Si Wafer Back Surfaces to Photoconductive Decay Time Measured with Microwave Reflection from Front Surfaces