Electron Beam Enhanced Surface Photovoltage
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概要
- 論文の詳細を見る
A SiO_2-covered p-type Si wafer 76 mm in diameter was irradiated by a focused electron beam of 30 keV. The resistivity of the wafer was 1 mΩm, and the SiO_2 layer formed by the wet oxidation process was 360 nm thick. Four electron dosages were used : 2×10^<-7>, 5×10^<-7>, 1×10^<-6> and 5×10^<-6> C/cm^2. After the electron beam irradiation, the surface photovoltage was found to increase in accordance with the dosage, though a photovoltage increment was hardly observed with a 2×10^<-7> C/cm^2. This phenomenon was caused by the increment of positive surface charges that came about as a result of the interface states formed by the electron beam irradiation.
- 社団法人応用物理学会の論文
- 1982-09-20
著者
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MUNAKATA Chusuke
Central Research Laboratory, Hitachi, Ltd.
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OKAZAKI Shinji
Central Research Laboratory, Hitacti, Ltd.
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Okazaki Shinji
Central Research Laboratory Hitachi Ltd.
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Okazaki Shinji
Central Research Lab. Hitachi Ltd.
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YAGI Kunihiro
Central Research Laboratory, Hitachi, Ltd.
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Yagi Kunihiro
Central Research Laboratory Hitachi Ltd.
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Munakata Chusuke
Central Res. Lab. Hitachi Ltd.
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