Germanium and Silicon Film Growth by Low-Energy Ion Beam Deposition
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概要
- 論文の詳細を見る
The design and characteristics of a low-energy ion beam deposition system are discussed. In the system, metal ions with an energy of 100 eV are deposited onto the substrate at a currentdensity of 4-5 μA/cm^2. Germanium single crystalline films are deposited on germanium (Ill) and silicon (111)substrate at substrate temperatures above 300℃. In the case of deposition below 200℃, films are found to be amorphous and re-crystallized by annealing above 300℃. When the ion energy over 500 eV is used, sputtering of the substrate is dominant and deposition is not observed for Ge^+ ions and the silicon substrate combination.The results demonstrated the feasibility of growing thin film by low-energy ion beam deposition.
- 社団法人応用物理学会の論文
- 1977-02-05
著者
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Tamura Shozo
Device Development Center Computer Group Hitachi Ltd.
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TOKUYAMA Takashi
Central Research Laboratory
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Tokuyama Takashi
Central Research Laboratory Hitachi Ltd.
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Yagi Kunihiro
Central Research Laboratory Hitachi Ltd.
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TOKUYAMA Takashi
Central Research Laboratory, Hitachi Ltd.,
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