Short Channel MOS FET's Fabricated by Self-Aligned Ion Implantation and Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-04-30

著者

• HASHIMOTO Norikazu

  Central Research Laboratory, HITACHI Ltd.

• Koyanagi Mitsumasa

  Central Research Laboratory Hitachi Ltd.

• Miyao Masanobu

  Central Research Laboratory

• TOKUYAMA Takashi

  Central Research Laboratory

• TAMURA Hiroshi

  Central Research Laboratory, Hitachi Ltd.

• Hashimoto Norikazu

  Central Clinical Laboratory Fukui Medical University

• Tamura Hiroshi

  Central Research Laboratory Hitachi Ltd.

関連論文

• Measurements of Compositional Change in Semi-Insulating GaAs Single Crystals by Precise Lattice Parameter Measurements
• Molecular Beam Epitaxy of Silicon-Based Heterostructure and Its Application to Novel Devices
• Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers : A-6: SILICON CRYSTALS
• Nature and Annealing Behavior of Disorders in Ion Implanted Silicon
• Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon : A-3: DEVICE TECHNOLOGY (III)
• MBE-Related Surface Fegregation of Dopant Atoms in Silicon : Condensed Matter
• Short Channel MOS FET's Fabricated by Self-Aligned Ion Implantation and Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
• Optical Investigations of Solid-Phase Crystallization (SPC) Properties of Si_Ge_X
• Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
• Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
• Surface Segregation Behaviors of B, Ga, and Sb during Si Molecular Beam Epitaxy : Calculation Using a First-Principles Method
• Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
• Surface Segregation Behaviors of B, Ga, and Sb during Si-MBE : Calculation Using a First-Principle Method
• Quantitative Correlation between the Surface Segregation of Ge and the Light Emission of Si/SiGe/Si Heterostructures
• Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
• Local-Symmetry Induced Light Emission from Si/Si_Ge_x/Si Quantum Wells
• High Packing Density, high Speed CMOS (Hi-CMOS) Device technology : A-3: MOS DEVICE AND LIST (3)
• Novel High Density, Stacked Capacitor MOS RAM : A-1: MOS DEVICE AND LIST (1)
• Selective Oxide Coating of Silicon Gate (SELOCS) : A-4: DEVICE TECHNOLOGY (1)
• Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
• Serum Levels of Soluble Interleukin-2 Receptor in Patients with Various Renal Diseases
• Deposition of Silicon Nitride Films by Microwave Glow Discharge
• Dielectric Degradation Mechanism of SiO_2 Examined by First-Principles Calculations : Electronic Conduction Associated with Electron Trap Levels in SiO_2 and Stability of Oxygen Vacancies Under an Electric Field
• Dielectric Degradation Mechanism of SiO_2 Examined through First-Principles Calculations : Electric Conduction Associated with Electron Traps and Its Stability under an Electric Field
• Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
• Silicon Solar Cells Fabricated by a New Ion Implantation Concept : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
• Characterization of 3-Inch Solar Cells Fabricated from Granular Silicon Obtained in a Fluidized-Bed Reactor : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
• Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon : I-1: SILICON SOLAR CELLS (I)
• Efficient Solar Cells from Metallurgical-Grade Silicon : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
• Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS
• Ac Surface Photovoltages in p-Type Silicon Wafers Oxidized in Water-Free and Wet Ambients
• Peroxy Linkage Defects in SiO_2 Examined through First-Principles Calculations : Defect Formation, Boron Binding, and Charged States of the B Adduct
• Dependence of Hopping-Conduction Energy of Holes on Distance between Trap Sites in SiO_2 : a Molecular Orbital Calculation
• Incorporation of N into Si/SiO_2 Interfaces : Molecular Orbital Calculations for Evaluating Interface Strain and Heat of Reaction
• Hopping-Conduction Energy of Holes in SiO_2 Determined Accurately by Molecular Orbital Calculation
• Molecular Orbital Theory Examination into the Improvement of Gate Oxide Integrity with the Incorporation of Nitrogen and Fluorine
• Influence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si_Ge_/Ge/Si_Ge_x Heterostructure
• High Hole Mobility in Modulation-Doped and Strain-Controlled p-Si_Ge_/Ge/Si_Ge_ Heterostructures Fabricated Using Molecular Beam Epitaxy
• Nanostructure Fabrication Based on Sporntaneous Formation Mechanisms
• Single Pulse Laser Annealing of a Double-Implanted Layer
• Germanium and Silicon Film Growth by Low-Energy Ion Beam Deposition
• Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser Annealing
• Silicon Solar Cells Fabricated by Ion Implantation and Laser Annealing : I-3: SILICON SOLAR CELLS (III)
• Optical Reflectivity Studies of Damage in Ion Implanted Silicon
• Low Energy and High Dose Phosphorus Ion Implantation into Silicon through SiO_2 Film
• Si Bridging Epitaxy from Si Windows onto SiO_2 by Q-Switched Ruby Laser Pulse Annealing
• Contactless Measurement of Wafer Lifetime by Free Carrier Infrared Absorption : C-6: CHARACTERIZATION
• Fabrication and Properties of Silicon Solar Cells Using Squarely Shaped Crystals : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
• Chemical and Physical Sputtering in F^+ Ion Beam Etching of Si
• Thermal Expansion Coefficient of a Pyrolitically Deposited Silicon Nitride Film
• Microplasmas in Alloyed Germanium P-N Junctions
• Plasma Etching Monitor by Electric Probe : A-5: DEVICE TECHNOLOGY (2)
• Dynamic Injection MNOS Memory Devices : A-5: MEMORY DEVICES
• Preparation and Electrical Properties of Bi_2Te_3-Ge Alloys
• Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs
• Contribution of Thermal SiO2 Layers on Si Wafer Back Surfaces to Photoconductive Decay Time Measured with Microwave Reflection from Front Surfaces
• Dielectric Degradation Mechanism of SiO2 Examined by First-Principles Calculations: Electronic Conduction Associated with Electron Trap Levels in SiO2 and Stability of Oxygen Vacancies Under an Electric Field

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