Preparation and Electrical Properties of Bi_2Te_3-Ge Alloys

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概要

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• The phase diagram for the Bi_2Te_3-Ge system in the region of 0-6 atomic percent Ge was determined by thermal analysis, X-ray diffraction, and the study of crystal growth. The solubility limit of Ge in solid Bi_2Te_3 was found to be about 0.3%, and the distribution coefficient to be about 0.1. Crystals containing various amounts of Ge up to the solubility limit were prepared by the Bridgman method. The electrical properties of Bi_2Te_3 are not much affected by the addition of Ge, and hence Ge is regarded as practically inactive in Bi_2Te_3. The secondary solid solution of the Bi_2Te_3-Ge system, which contains more than 1.2% Ge, is an n-type semiconductor with a very high carrier concentration (of the order of 10^<20>cm^<-3>). The crystal growth study shows that most of Ge-doped specimens used in Bergmann's works were highly inhomogeneous.

• 社団法人応用物理学会の論文
• 1966-07-15

著者

• Tamura Hiroshi

  Central Research Laboratory Hitachi Ltd.

• Tamura Hiroshi

  Central Research Laboratory Hitachi Ltd.:(present Address) Department Of Pure And Applied Sciences C

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