Si Bridging Epitaxy from Si Windows onto SiO_2 by Q-Switched Ruby Laser Pulse Annealing
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概要
- 論文の詳細を見る
Single crystal Si films have been epitaxially grown from chemical vapor-deposited poly-Si films from 2000 to 6000 Å thick on (100) Si substrates by Q-switched ruby laser pulse irradiation of 25 ns duration at power densities above 2.0 J/cm^2. When a poly-Si film deposited on the thermally grown SiO_2 comes in contact with the substrate at the oxide window area, epitaxial growth first occurs at the window area. It then propagates in the lateral direction over the SiO_2 up to a distance of 1.2 μm from the oxide edge. In Si films grown on SiO_2, dislocations and stacking faults lying nearly in the 311 directions remain.
- 社団法人応用物理学会の論文
- 1980-01-05
著者
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Tamura Masao
Central Research Laboratory
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TOKUYAMA Takashi
Central Research Laboratory
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TAMURA Hiroshi
Central Research Laboratory, Hitachi Ltd.
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Tokuyama Takashi
Central Research Laboratory Hitachi Ltd.
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Tamura Hiroshi
Central Research Laboratory Hitachi Ltd.
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