Epitaxial Transformation of Ion-Implanted Polycrystalline Si Films on (100) Si Substrates by Rapid Thermal Annealing
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概要
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The epitaxial realignment of CVD deposited and As^+ ion-implanted poly-Si layers on (100) Si substrates has been investigated by both plan-view and cross-section TEM observations. High density annealing twins, running parallel to <110> orientations on {111} planes, remain in epitaxially regrown films, although epitaxial realignment is realized for 1.5×10^<16> As^+/cm^2 implanted samples annealed at 1150℃ for 30 s. The perfectness of a regrown film is shown by crystal lattice imaging in high-resolution electron microscopy from a cross-section sample. High-resolution TEM also reveals the existence of precipitates at the interface between the regrown film and the substrate.
- 社団法人応用物理学会の論文
- 1985-02-20
著者
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AOKI Shigeru
Central Research Laboratry, Hitachi Ltd.
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NATSUAKI Nobuyoshi
Central Research Laboratory, Hitachi Ltd.
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Tamura Masao
Central Research Laboratory
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Natsuaki Nobuyoshi
Central Research Laboratory Hitachi Ltd.
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Natsuaki Nobuyoshi
Central Laboratory Hitachi Ltd.
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Aoki Shigeru
Central Research Laboratory Hitachi Ltd.
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TAMURA Masao
Central Research Laboratory, Hitachi Ltd.
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