Improvement of SiO2/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion
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概要
- 論文の詳細を見る
Thermal drive-in diffusion of ion-implanted F atoms has been employed to fluorinate SiO2/Si interfaces and thereby improve their electrical properties. The interface state density can be lowered with little fixed charge generation. Correspondingly, pn-junction surface leakage current decreases. Furthermore, the interfaces can be hardened against hot-electrons due to Fowler-Nordheim current injection and avalanche current at the junction surface. As a result, a fluorinated MOSFET shows higher hot-carrier immunity. It is pointed out that there is an optimal F dose for these improvements to be achieved.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-06-20
著者
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Itoga Toshihiko
Central Research Laboratories Hitachi Ltd.
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Natsuaki Nobuyoshi
Central Laboratory Hitachi Ltd.
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OHYU Kiyonori
Central Research Laboratory, Hitachi Ltd.
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Itoga Toshihiko
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185
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Nishioka Yasushiro
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185
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Ohyu Kiyonori
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185
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