Degradation of n+/p Junction Characteristics by Aluminum Contamination

スポンサーリンク

概要

• 論文の詳細を見る

• This paper discusses the effects of Al contamination on n+/p junction characteristics. The Al contamination occurs during ion implantation and the level can be as high as one tenth of the implanted dose. The Al contamination leads to an increase in the n+/p junction leakage current and a decrease in breakdown voltage. This is due to the increase of SiO2/Si interface state density and fixed negative charge in SiO2 film. The contaminating Al is segregated in the SiO2 film and remains very close to the oxide surface even in nm-order SiO2 (less than 10 nm), and the influence of Al becomes greater as SiO2 thickness decreases. Since Al is, and will continue to be, the most widely used material for process equipment, Al contamination control might become one of the key issues in achieving highly reliable future giga-scale ULSIs.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1997-07-15

著者

• Hiraiwa Atsushi

  Central Research Laboratory Hitachi Ltd.

• OHKURA Makoto

  Central Research Lab., Hitachi, Lid.

• KOJIMA Hisao

  Central Research Laboratory, Hitachi Ltd.

• Itoga Toshihiko

  Central Research Laboratories Hitachi Ltd.

• Itoga Toshihiko

  Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan

• Hiraiwa Atsushi

  Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan

• Kojima Hisao

  Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan

• Ohkura Makoto

  Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan

関連論文

• Sonic Spray Nebulizer for Inductively Coupled Plasma Atomic Emission Spectrometry
• Simultaneous Measurement of Size and Depth of Each Defect in a Silicon Wafer Using Light Scattering at Two Wavelengths : Principle, Limitation and Applications of Optical Shallow Defect Analyzer
• Micro-Probe Reflection High-Energy Electron Diffraction Technique. : III. Observation of Polycrystalline Silicon Film on Crystalline Silicon Substrate Irradiated by Continuous-Wave Ar^+-Laser
• Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers : A-6: SILICON CRYSTALS
• A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-μm Flash Memory Cells (Special Issue on Microelectronic Test Structures)
• P-Type Polysilicon Processing Temperature Reduction Using In Situ Boron-Doped Amorphous Silicon
• Development of Ammonia Adsorption Filter and Its Application to LSI Manufacturing Environment
• The Effect of Isopropyl Alcohol Adsorption on the Electrical Characteristics of Thin Oxide
• The Effect of IPA Adsorption on Thin Oxide
• The Oxide Reliability Improvement with Ultra-Dry Unloading in Wet Oxidation Using Load Lock Oxidation System
• X-Ray Photoelectron Spectroscopy Study of Native Oxidation on Misoriented Si(100)
• Highly Efficient Gettering of Heavy Metals Using Carbon Implanted Eptaxial Si Wafers
• Single Pulse Laser Annealing of a Double-Implanted Layer
• Degradation of n^+/p Junction Characteristics by Aluminum Contamination
• The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere
• Fast Etching Phenomenon of Plasma-Silicon Nitride Films over Substrate Steps
• Controlling the Solid-Phase Nucleation of Amorphous Si by Means of a Substrate Step Structure and Local Phosphorus Doping
• A Ceramic Plasma Torch for Determining Silicon Content in HF Solutions by Inductively Coupled Plasma Atomic Emission Spectrometry
• Ultra-Shallow Depth Profiling of Arsenic Implants in Silicon by Hydride Generation-Inductively Coupled Plasma Atomic Emission Spectrometry
• Advantages of Fluorine Introduction in Boron Implanted Shallow p^+/n-Junction Formation
• Improvement of SiO2/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion
• Degradation of n+/p Junction Characteristics by Aluminum Contamination

もっと見る 閉じる

スポンサーリンク