Controlling the Solid-Phase Nucleation of Amorphous Si by Means of a Substrate Step Structure and Local Phosphorus Doping
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概要
- 論文の詳細を見る
We propose a solid-phase crystallization technique that controls the location of crystal grain formation on SiO_2 substrates. This enables the formation of electronic devices in a single grain. To determine the condition of the technique, the nucleation characteristics of amorphous Si with P- and B-doping are investigated. Also, the characteristics with and without step structures on the substrate surface are reported and discussed. The various nucleation behaviors can be interpreted in terms of the critical size of the nucleus and of the rate of crystal growth.
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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Takeda Eiji
Central Research Laboratory Hitachi Ltd.
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Takeda Eiji
Central Research Laboratory Hitachi Lid.
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OHKURA Makoto
Central Research Lab., Hitachi, Lid.
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Ohkura Makoto
Central Research Laboratory Hitachi Ltd.
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Moniwa M
Hokkaido Univ. Sapporo Jpn
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Kusukawa Kikuo
Central Research Laboratory Hitachi Ltd.
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MONIWA Masahiro
Central Research Laboratory, Hitachi Ltd.,
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Takeda Eiji
Central Research Laboratory
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TAKEDA Eiji
Central Research Laboratory, Hitachi Ltd.,
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