Micro-Probe Reflection High-Energy Electron Diffraction Technique. : III. Observation of Polycrystalline Silicon Film on Crystalline Silicon Substrate Irradiated by Continuous-Wave Ar^+-Laser

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1983-03-20

著者

• OHKURA Makoto

  Central Research Lab., Hitachi, Lid.

• Hayakawa Kazunobu

  Central Research Laboratory Hitachi Ltd

• Hayakawa Kazunobu

  Central Research Laboratory Hitachi Lid.

• ICHIKAWA Masakazu

  Central Research Laboratory, Hitachi Lid.

• Ohkura Makoto

  Central Research Laboratory Hitachi Lid.

• Ichikawa Masakazu

  Central Research Laboratory

• Ichikawa Masakazu

  Central Research Laboratory Hitachi Lid.

関連論文

• Simultaneous Measurement of Size and Depth of Each Defect in a Silicon Wafer Using Light Scattering at Two Wavelengths : Principle, Limitation and Applications of Optical Shallow Defect Analyzer
• Micro-Probe Reflection High-Energy Electron Diffraction Technique. : III. Observation of Polycrystalline Silicon Film on Crystalline Silicon Substrate Irradiated by Continuous-Wave Ar^+-Laser
• Generalized Bethe Potential in Reflection Electron Diffraction
• Identification of Crystal Axes by Kikuchi Patterns in Reflection High-Energy Electron Diffraction
• Geometrical Surface Wave Resonance at a Silicon (111) Surface in Reflection High-Energy Electron Diffraction
• Scanning Electron Microscope Observation of Magnetic Domains Using Spin-Polarized Secondary Electrons
• Intensity Behaviour of Exchange Reflexions in LEED from an Antiferromagnetic Crystal
• Exchange Reflexions in Low Energy Electron Diffraction from Antiferromagnetic Nickel Oxide Crystal
• Spin Polarization of Electron-Excited Secondary Electrons from a Permalloy Polycrystal
• Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers : A-6: SILICON CRYSTALS
• Observation of Surface Micro-Structures by Micro-Probe Reflection High-Energy Electron Diffraction
• A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-μm Flash Memory Cells (Special Issue on Microelectronic Test Structures)
• High-Temperature MBE Growth of Si-Direct Current Heating Effects on (111) and (001) Vicinal Surfaces
• Dynamics of Step Bunching Induced by DC Resistive Heating of Si Wafer
• High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon
• The Oxide Reliability Improvement with Ultra-Dry Unloading in Wet Oxidation Using Load Lock Oxidation System
• Highly Efficient Gettering of Heavy Metals Using Carbon Implanted Eptaxial Si Wafers
• Nanostructure Fabrication Based on Sporntaneous Formation Mechanisms
• Single Pulse Laser Annealing of a Double-Implanted Layer
• Degradation of n^+/p Junction Characteristics by Aluminum Contamination
• The Increase of the Native Oxide Thickness on H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere
• Observation of Magnetic Induction Distribution by Scanning Interference Electron Microscopy
• Controlling the Solid-Phase Nucleation of Amorphous Si by Means of a Substrate Step Structure and Local Phosphorus Doping
• Micro-Probe Reflection High-Energy Electron Diffraction Technique. : I. Determination of Crystallographic Orientations of Polycrystal-Silicon Surfaces
• Micro-Probe Reflection High-Energy Electron Diffraction Technique. : II. Observation of Aluminum Epitaxial Growth on a Polycrystal-Silicon Surface by Vacuum Evaporation
• Contrast Behavior of the Laue-Case Kikuchi Pattern in Reflection Electron Diffraction
• Spin Polarization due to Low-Energy Electron Diffraction at the W(001) Surface
• Degradation of n+/p Junction Characteristics by Aluminum Contamination

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