High-Temperature MBE Growth of Si-Direct Current Heating Effects on (111) and (001) Vicinal Surfaces
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-05-15
著者
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Ishida M
Sii Nanotechnology Inc.
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C
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Ichikawa Mitsuru
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Stoyanov S
Hitachi Ltd. Tokyo
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Stoyanov Stoyan
Central Research Laboratory Hitachi Ltd.:(pressent Address)institute Of Physical Chemistry Bulgarian
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Stoyanov Stoyan
Central Research Laboratory Hitachi Ltd.
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ICHIKAWA Masakazu
Central Research Laboratory, Hitachi Lid.
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Doi Takahisa
Central Research Laboratory, Hitachi Ltd.
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IWASA Masayuki
SII Nanotechnology Inc.
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Ichikawa Masakazu
Central Research Laboratory
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Doi Takahisa
Central Research Laboratory
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Doi Takahisa
Central Research Laboratory Hitachi Ltd.
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Iwasa Masayuki
Sii Nanotechnology Inc. Tokyo Jpn
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