Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces

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概要

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• We have studied the mechanism of layer-by-layer oxidation of Si(001)surfaces. The layer-by-layer oxidation was confirmed and precisely monitored by scanning reflection electron microscopy(SREM). By combining SREM and scanning tunneling microscopy(STM)methods, we investigated the change in atomic-scale roughness at SiO_2/Si(001)interfaces during the oxidation. We found that, while the oxide interface is atomically flat after the oxidation of each layer is complete, nanometer-scale oxide islands with a single atomic height are densely nucleated at the interface during the oxidation of each layer. We also observed an oscillation in the intensity of reflection high-energy electron diffraction(RHEED)spots during the top-layer oxidation. These results clearly indicate that the layer-by-layer oxidation proceeds by the nucleation of nanometer-scale oxide islands at the interfaces and by their preferential lateral island growth.

• 社団法人応用物理学会の論文
• 2000-04-30

著者

• ICHIKAWA Masakazu

  Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c

• BABA Toshio

  Fundamental Research Laboratories, NEC Corporation

• Ishida M

  Sii Nanotechnology Inc.

• Ichikawa Masakazu

  Joint Research Center For Atom Technology

• Ichikawa Masakazu

  Joint Research Center For Atom Technology Angstrom Technology Partnership

• Ichikawa Masakazu

  Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C

• Ichikawa Mitsuru

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• WATANABE Heiji

  Fundamental Research Laboratories, NEC Corporation

• Baba T

  Fundamental Research Laboratories Nec Corporation:(present Office)silicon System Laboratories Nec Co

• Baba Toshio

  Fundamental And Environmental Research Laboratories Nec Corporation

• Watanabe Heiji

  Fundamental Research Laboratories Nec Corporation

• IWASA Masayuki

  SII Nanotechnology Inc.

• Watanabe Hiroyuki

  Semiconductor Leading Edge Technologies Inc.

• Iwasa Masayuki

  Sii Nanotechnology Inc. Tokyo Jpn

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