28p-ZF-1 Step bunching in MBE growth of Si induced by dc resistive heating - a theoretical model.

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 1992-03-12

著者

• Stoyanov Stoyan

  Central Research Laboratory Hitachi Ltd.:(pressent Address)institute Of Physical Chemistry Bulgarian

• Stoyanov Stoyan

  Central Research Laboratory Hitachi Ltd.

関連論文

• High-Temperature MBE Growth of Si-Direct Current Heating Effects on (111) and (001) Vicinal Surfaces
• Dynamics of Step Bunching Induced by DC Resistive Heating of Si Wafer
• 28p-ZF-1 Step bunching in MBE growth of Si induced by dc resistive heating - a theoretical model.

スポンサーリンク