Investigating Line-Edge Roughness in Calixarene Fine Patterns Using Fourier Analysis

スポンサーリンク

概要

• 論文の詳細を見る

• The line-edge roughness (LER) of patterns of negative-tone electron-beam resists, methyl-acetoxy calix[n]arene (n = 6-8), was investigated using Fourier analysis. LER measurements were carried out by determining the intensity peaks of the pattern edges in scanning electron micrographs. The Fourier analysis showed that the roughness of the resist materials produced large peaks in the 10 to 100 nm wavelength range. The total intensity of LER spectra clearly depended on the electron dose and the "n" number of the calixarene resists. The smallest LER was observed in the calix[7]arene films. In contrast, the calix[6]arene films had a relatively large intensity in their Fourier spectra. X-ray diffraction measurements (XRD) revealed crystallizafion in the calix[6]arene films and an amorphous phase in the calix[7]arene and calix[8]arene films.

• 社団法人応用物理学会の論文
• 2002-06-30

著者

• ISHIDA Masahiko

  NEC Fundamental and Environmental Research Laboratories

• OCHIAI Yukinori

  NEC Fundamental and Environmental Research Laboratories

• Fujita J

  Crest-jst

• Fujita Jun-ichi

  Nec Fundamental Research Laboratories

• Ishida M

  Sii Nanotechnology Inc.

• Ichikawa Masakazu

  Joint Research Center For Atom Technology

• Ichikawa Masakazu

  Joint Research Center For Atom Technology Angstrom Technology Partnership

• Ichikawa Masakazu

  Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C

• Ichikawa Mitsuru

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• IWASA Masayuki

  SII Nanotechnology Inc.

• KOBAYASHI Kenji

  NEC Fundamental Research Laboratories

• YAMAMOTO Hiromasa

  Tsukuba Research Laboratories

• TONO Seiji

  Tsukuba Research Laboratories

• Yamamoto H

  Tsukuba Research Laboratories

• Iwasa Masayuki

  Sii Nanotechnology Inc. Tokyo Jpn

関連論文

• A highly efficient sublimation purification system using baffles with orifices
• Sensitization of organic photovoltaic cells based on interlayer excitation energy transfer
• Thin-film and single-crystal transistors based on a trifluoromethyl-substituted alternating (thiophene/phenylene)-co-oligomer
• Room Temperature Nanoimprinting Using Release-Agent Spray-Coated Hydrogen Silsesquioxane
• Amorphous-to-Polycrystalline Silicon Transition in Hot Wire Cell Method
• Diameter-Controlled Carbon Nanotubes Grown from Lithographically Defined Nanoparticles
• Nanometer-Scale Patterning of Polystyrene Resists in Low-Voltage Electron Beam Lithography
• Calixarene Electron Beam Resist for Nano-Lithography
• Resolution-Limit Study of Chain-Structure Negative Resist by Electron Beam Lithography
• Fabrication of Nanomanipulator with SiO_2/DLC Heterostructure by Focused-Ion-Beam Chemical Vapor Deposition
• Characteristics of Nano-Electrostatic Actuator Fabricated by Focused Ion Beam Chemical Vapor Deposition
• Direct Extraction of Sodium Negative Ions from Sodium Plasma
• Energy Distribution of Au^- Ions Produced by Sputtering
• Dependence of Au^- Production upon the Target Work Function in a Plasma-Sputter-Type Negative Ion Source
• Sub-10-nm Electron Beam Lithography Using a Poly(α-methylstyrene) Resist with a Molecular Weight of 650
• Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO_2 Layers Used in Nanofabrication
• Polycrystalline Cu(InGa)Se_2 Thin-Film Solar Cells with ZnSe Buffer Layers
• Comparison of Young's Modulus Dependency on Beam Accelerating Voltage between Electron-Beam- and Focused Ion-Beam-Induced Chemical Vapor Deposition Pillars
• Growth Manner and Mechanical Characteristics of Amorphous Carbon Nanopillars Grown by Electron-Beam-Induced Chemical Vapor Deposition
• Position-Controlled Carbon Fiber Growth Catalyzed Using Electron Beam-Induced Chemical Vapor Deposition Ferrocene Nanopillars
• Bilayer Resist Method for Room-Temperature Nanoimprint Lithography
• Nozzle-Nanostructure Fabrication on Glass Capillary by Focused-Ion-Beam Chemical Vapor Deposition and Etching
• Three-Dimensional Nanoimprint Mold Fabrication by Focused-Ion-Beam Chemical Vapor Deposition
• Structure and Resonant Characteristics of Amorphous Carbon Pillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition
• Fused thiophene-split oligothiophenes with high ionization potentials for OTFTs
• Spectral Characteristics of Thin-Film Stacked-Tandem Solar Modules
• A molecular thermometer based on luminescence of copper(II) tetraphenylporphyrin
• High coupling efficiency of microcavity organic light-emitting diode with optical fiber for as light source for optical interconnects
• Organic Thin-Film Transistors with Conductive Metal-Oxides as Source-Drain Electrodes
• Field-effect Characteristics of a One-dimensional Platinum Chain Compound, Bis(1,2-benzoquinonedioximato)platinum(II)
• Light Emission from Organic Single-Crystal Field-Effect Transistors
• Electroluminescence Spikes of Pulsed Organic Light-Emitting Diodes at Switch-Off Using 1, 4-Bis[2-[4-[N, N-di(p-tolyl)amino]phenyl]vinyl]benzene as a Light-Emitting Layer
• Lead Halide-based Layered Perovskites Incorporated with a p-Terphenyl Laser Dye
• Use of Trapezoid Pulse Voltage in Study of Transient Response of Organic Light-Emitting Diodes
• Organic Field-Effect Transistor of (Thiophene/Phenylene) Co-Oligomer Single Crystals with Bottom-Contact Configuration
• Relationship between Molecular Skeleton and Stimulated-emission Threshold in Dilute Thin Films of Linear-chain-structured Fluorescent Dyes
• Self-Developing Properties of an Inorganic Electron Beam Resist and Nanometer-Scale Patterning Using a Scanning Electron Beam
• Electron-Stimulated Desorption and in situ Scanning Electron Microscopy Study on Self-Developing Reaction of High-Resolution Inorganic Electron Beam Resist
• Nanometer-Scale Direct Carbon Mask Fabrication Usirng Electron-Beam-Assisted Deposition
• Observation and nucleation control of Ge nanoislands on Si(111) surfaces using scanning reflection electron microscopy
• Layer-by-Layer Oxidation of Si(001) Surfaces
• Method of Measuring Charge Carrier Mobility in Organic Light-Emitting Diodes Using Fast Transient Electroluminescence Responses (Short Note)
• High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method
• Electrical Characterization of Atomic-Scale Defects in an Ultrathin Si Oxynitride Layer
• A Fabrication of Very Low Contact Resistance AIGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy : Optics and Quantum Electronics
• High-Temperature MBE Growth of Si-Direct Current Heating Effects on (111) and (001) Vicinal Surfaces
• Diffusion Constants of Si Adsorbates on a Si(001) Surface
• Observation of Si(001) Surface Domains in Absorption Current Images of an Electron Microscope
• Observation of 1-nm-High Structures on a Si (001) Surface Using a Differential Interference Optical Microscope
• Low-Threshold Photopumped Distributed Feedback Plastic Laser Made by Replica Molding
• Room Temperature Nanoimprint Technology Using Hydrogen Silsequjoxane (HSQ)
• Exciton Dynamics in Organic Semiconductor Devices : Investigation of Exciton-Charge Carrier Interactions as Revealed by Photoluminescence Responses(Atoms, Molecules, Chemical Physics)
• Photopumped Organic Solid-State Dye Laser with a Second-Order Distributed Feedback Cavity : Optics and Quantum Electronics
• Anisotropic Diffusion of Si Adsorbates on a Si (001) Surface
• Direct Observation of Electron Charge of Si Atoms on a Si(001) Surface
• Reflective Double Slit Atom Interferometer
• Reflective Double Slit Atom Interferometer
• Scanning Tunneling Microscopy Study of Hf Silicate Formed by Ulttrathin Hf Metal on SiO_2 : Effect of Hf/SiO_2 Thickness Ratio
• Evaluation of fluorinated diamond like carbon as antisticking layer by scanning probe microscopy
• Sub-10-nm-Scale Lithography Using p-chloromethyl-methoxy-calix[4]arene Resist
• Investigating Line-Edge Roughness in Calixarene Fine Patterns Using Fourier Analysis
• Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
• Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
• Nanostructure Fabrication Based on Sporntaneous Formation Mechanisms
• Giant Quantum Reflection of Neon Atoms from a Ridged Silicon Surface
• Fabrication and Characterization of 14-nm-Gate-Length EJ-MOSFETs
• Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
• A Proposal of a Hybrid Magnetic Probe
• Nanolithography Using a Chemically Amplified Negative Resist by Electron Beam Exposure
• Electrical Characterization of Atomic-Scale Defects in an Ultrathin Si Oxynitride Layer
• Atomic-Scale Structure of SiO_2/Si(001) Interface Formed by Furnace Oxidation
• Temperature Dependence of Release Effect for Antisticking Layer in Nanoimprint Characterized by Scanning Probe Microscopy
• Nozzle-Nanostructure Fabrication on Glass Capillary by Focused-Ion-Beam Chemical Vapor Deposition and Etching
• Diameter-Controlled Carbon Nanotubes Grown from Lithographically Defined Nanoparticles
• Bilayer Resist Method for Room-Temperature Nanoimprint Lithography
• Three-Dimensional Nanoimprint Mold Fabrication by Focused-Ion-Beam Chemical Vapor Deposition
• Electron-beam Initiated Transfer of Ge from Ge Islands on SiO2 Surfaces to the Tip of a Scanning Tunneling Microscope

もっと見る 閉じる

スポンサーリンク