Electron-beam Initiated Transfer of Ge from Ge Islands on SiO2 Surfaces to the Tip of a Scanning Tunneling Microscope
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概要
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Extraction of Ge from Ge islands on SiO2 surfaces using the scanning tunneling microscope (STM) was found to be initiated by an electron beam of about 1 nA from the scanning electron microscope (SEM). As a result, 10-nm-wide lines of bare SiO2 in the layer of Ge islands were created. The Ge extraction from the sample was accompanied by needle growth on the tip apex, which was observed with the SEM@. As a function of the negative tip bias voltage, the extraction was stable at about ${-}4$ V, and the efficiency of extraction increased as the tunneling current increased. The results suggest that the electron beam initiates fluctuations of the tunneling current and chemically-assisted field-evaporation is triggered. The observed effect shows possibilities for fabricating nanostructures on dielectric surfaces using the STM.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2001-05-15
著者
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Shklyaev Alexander
Joint Research Center For Atom Technology
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Ichikawa Masakazu
Joint Research Center For Atom Technology
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Shklyaev Alexander
Joint Research Center for Atom Technology (JRCAT), Angstrom Technology Partnership (ATP), 1-1-4 Higashi, Tsukuba, Ibaraki 305-0046, Japan
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Ichikawa Masakazu
Joint Research Center for Atom Technology (JRCAT), Angstrom Technology Partnership (ATP), 1-1-4 Higashi, Tsukuba, Ibaraki 305-0046, Japan
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