Calixarene Electron Beam Resist for Nano-Lithography

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-12-30

著者

• Fujita J

  Crest-jst

• Nomura E

  Nec Corp. Ibaraki Jpn

• Nomura Eiichi

  Fundamental Research Laboratories Nec Corporation

• Nomura Eiichi

  Fundamental Research Labs Nec Corporation

• MANAKO Shoko

  Fundamental Res. Labs., NEC Corporation

• FUJITA Jun-ichi

  Fundamental Res. Labs., NEC Corporation

• OCHIAI Yukinori

  Fundamental Res. Labs., NEC Corporation

• MATSUI Shinji

  Fundamental Res. Labs., NEC Corporation

• OHNISHI Yoshitake

  Fundamental Research Laboratories, NEC Corporation

• SAKAMOTO Toshitsugu

  Fundamental Research Laboratories, NEC Corporation

• SAKAMOTO Tetsuo

  Institute of Industrial Science, The University of Tokyo

• Sakamoto Toshitugu

  Faculty Of Engineering Science Osaka University

• Manaka Susumu

  Fundamental Research Laboratories Nec Corporation

• Shiokawa Takao

  Semiconductor Laboratory Riken The Institute For Physical And Chemical Research

• Sakamoto T

  Department Of Communication Engineering Faculty Of Computer Science And System Engineering Okayama P

• Sakamoto Toshitsugu

  Fundamental Research Laboratories Nec Corporation

• Ohnishi Yoshitake

  Fundamental Research Laboratories Nec Corporation

• Sakamoto Toshitsugu

  Fundamental and Environmental Research Labs., NEC Corp., Tsukuba, Ibaraki 305-8501, Japan

関連論文

• Effect of Fermi Level Motion on the Optical, ESR and Transport Properties of CuInSe_2
• ESR and Optical Studies of CuInS_2 Single Crystals
• Proximity Effect Correction by Pattern Modified Stencil Mask in Large-Field Projection Electron-Beam Lithography
• Recent Progress in Electron-Beam Cell Projection Techology
• Nanometer-Scale Patterning of Polystyrene Resists in Low-Voltage Electron Beam Lithography
• Calixarene Electron Beam Resist for Nano-Lithography
• Resolution-Limit Study of Chain-Structure Negative Resist by Electron Beam Lithography
• Fluorine Gas Field Ion Source : Beam Induced Physics and Chemistry
• Coulomb Interaction Effect in Cell Projection Lithography
• Fabrication of Nanomanipulator with SiO_2/DLC Heterostructure by Focused-Ion-Beam Chemical Vapor Deposition
• Contrast Evaluation of the SCALPEL GHOST in 100 kV Electron Projection Lithography
• Direct Extraction of Sodium Negative Ions from Sodium Plasma
• Energy Distribution of Au^- Ions Produced by Sputtering
• Dependence of Au^- Production upon the Target Work Function in a Plasma-Sputter-Type Negative Ion Source
• Sub-10-nm Electron Beam Lithography Using a Poly(α-methylstyrene) Resist with a Molecular Weight of 650
• Investigation of Hall Resistivity in Antidot Lattices with respect to Commensurability Oscillations
• On the Mechanism of Commensurability Oscillations in Anisotropic Antidot Lattices
• Current-Direction-Dependent Commensurate Oscillations in GaAs/AlGaAs Antidot Superlattice
• Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/ GaAs Heterostructure : Micro/nanofabrication and Devices
• Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/GaAs Heterostructure
• Anderson Localization and Universal Conductance Fluctuations with Spin-Orbit Interactions in δ-Doped GaAs Films and Wires
• Phase Coherence Length in Planar Doped Thin GaAs Wires Fabricated by Ion Beam Etching : Microfabrication and Physics
• Phase Coherence Length in Planar Doped Thin GaAs Wires Fabricated by Ion Beam Etching
• Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation : Microfabrication and Physics
• Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation
• 40 nm Width Structure of GaAs Fabricated by Fine Focused Ion Beam Lithography and Chlorine Reactive Ion Etching : Techniques, Instrumentations and Measurement
• FIB Exposure Characteristics of LB Film
• Ridge Type Microfabrication by Maskless Ion Implantation of Si into SiO_2 Film
• 30 nm Line Fabrication on PMMA Resist by Fine Focused Be Ion Beam
• A Novel Fabrication Method for Polycrystalline Silicon Thin-Film Transistors with a Self-Aligned Lightly Doped Drain Structure
• Supercritical Fluid Clean-Up of Environmental Samples for the Analysis of Polycyclic Aromatic Hydrocarbons Using Time-of-Flight Secondary Ion Mass Spectrometry
• Comparison of Young's Modulus Dependency on Beam Accelerating Voltage between Electron-Beam- and Focused Ion-Beam-Induced Chemical Vapor Deposition Pillars
• Potential Modulation of Semiconductor Dot Array System due to Photoexcitation
• Electron-Beam-Induced Oxidation for Single-Electron Devices
• Investigation of Photoresponse in Photoconducting Semiconductor-Superconductor Microstructure
• Transport Properties and Fabrication of Coupled Electron Waveguides
• Evaluation of Edge Channel Width by Frequency Dependence of Capacitance Minima in Quantum Hall Regime
• Magnetic Electron Focusing Effect in GaAs/AlGaAs Heterostructure with Gate-Controlled Byway Channel
• Fabrication and Magnetotransport of One-Dimensional Lateral Surface Superlattice Fabricated by Low-Energy Ion Irradiation
• Resolution of 1:1 Electron Stepper with Patterned Cold Cathode
• Structure and Resonant Characteristics of Amorphous Carbon Pillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition
• Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
• Formation and Characterization of Thin Oxide Layers on the Spatially Controlled Atomic-Step-Free Si(001) Surface
• Spatially Controlled Formation of an Atomically Flat Si(001) Surface by Annealing with a Direct Current in an Ultrahigh Vacuum
• Performance Check of Vegetation Fluorescence Imaging Lidar through In Vivo and Remote Estimation of Chlorophyll Concentration Inside Plant Leaves
• Range-resolved Image Detection of Laser-induced Fluorescence of Natural Trees for Vegetation Distribution Monitoring
• Self-Developing Properties of an Inorganic Electron Beam Resist and Nanometer-Scale Patterning Using a Scanning Electron Beam
• Electron-Stimulated Desorption and in situ Scanning Electron Microscopy Study on Self-Developing Reaction of High-Resolution Inorganic Electron Beam Resist
• Nanometer-Scale Direct Carbon Mask Fabrication Usirng Electron-Beam-Assisted Deposition
• Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV
• Room Temperature Nanoimprint Technology Using Hydrogen Silsequjoxane (HSQ)
• Measurement of Sidewall Roughness by Scanning Tunneling Microscope : Inspection and Testing
• Measurement of Sidewall Roughness by Scanning Tunneling Microscope
• Carbon-Nanotube Field-Effect Transistors with Very High Intrinsic Transconductance
• Nonlinear Dynamics in Directly Modulated Self-Pulsating Laser Diodes with a Highly Doped Saturable Absorption Layer(Optics and Quantum Electronics)
• Stability of Optical Dynamic Memory Operation under Period-Two State of Chaotic System
• Sub-10-nm-Scale Lithography Using p-chloromethyl-methoxy-calix[4]arene Resist
• Investigating Line-Edge Roughness in Calixarene Fine Patterns Using Fourier Analysis
• Synthesis of Superconducting Epitaxial Films of Ba_K_xBiO_3 by Laser Ablation
• Multiple-Valued Memory Operation Using a Single-Electron Device : a Proposal and an Experimental Demonstration of a Ten-Valued Operation
• Reverse Dry Etching Using a High-Selectivity Carbon Mask Formed by Electron Beam Deposition
• GaAs Dry Etching Using Electron Beam Induced Surface Reaction
• Observation of 77 K Staircase I-V Characteristics in 2DEG's Irradiated by a Focused Ion Beam
• Single Electron Digital Phase Modulator
• High-Quality GaAs/AlAs Buried Heterostructures Grown by Molecular Beam Epitaxy on Patterned Substrates
• Focused-Ion-Beam Surface Modification for Selective Growth of InP Wires on GaAs
• Cl Atom Desorption by Chemical Reaction with Al Atom on Si(111) 7 × 7 Studied by Scanning Tunneling Microscopy
• Nanostructure Fabrication by Scanning Tunneling Microscope : Microfabrication and Physics
• Nanostructure Fabrication by Scanning Tunneling Microscope
• Superconducting Lines Fabricated from Epitaxial Y-Ba-Cu-O Films : High Temperature Superconducting Thin-Films(Solid State Devices and Materials 1)
• YBa_2Cu_3O_y Superconducting Thin Film Obtained by Laser Annealing : Electrical Properties of Condensed Matter
• Study of Josephson-Quasiparticle Cycles in Superconducting Single-Electron Transistors
• Novel Process for Visible Light Emission from Si Prepared by Ion Irradiation
• An Approach for Nanolithography Using Electron Holography
• Silicon nano-scale devices
• Single-Electron Memory Fabricated from Doped Silicon-on-Insulator Film
• Hot Electron Transport in Si-MOSFETs
• Transport Properties in Sub-10-nm-gate EJ-MOSFETs
• Si In-Plane Floating-Dot Memory with a Single Electron Transistor
• Fabrication and Characterization of 14-nm-Gate-Length EJ-MOSFETs
• Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
• Spatial Distributions of Individual Traps in a Si/SiO_2 Interface
• Spatial Distributions of Individual Traps in a Si/SiO_2 Interface
• Development of an Ion and Electron Dual Focused Beam Apparatus for Three-Dimensional Microanalysis
• Behavior of Gallium Secondary Ion Intensity in Gallium Focused Ion Beam Secondary Ion Mass Spectrometry
• Ten-Nanometer Resolution Nanolithography using Newly Developed 50-kV Electron Beam Direct Writing System : Micro/nanofabrication and Devices
• Ten-Nanometer Resolution Nanolithography using Newly Developed 50-kV Electron Beam Direct Writing System
• A Proposal of a Hybrid Magnetic Probe
• Bi-Level Structures for Focused Ion Beam Using Maskless Ion Etching
• Nanolithography Using a Chemically Amplified Negative Resist by Electron Beam Exposure
• Focused Ion Beam Lithography Using Novolak-Based Resist : Techniques, Instrumentations and Measurement
• Fabrication of Y-Cu Liquid Metal Ion Sources : Techniques, Instrumentations and Measurement
• Etching Characteristics for Organosilica
• Low-Temperature Electron-Beam-Assisted Dry Etching for GaAs Using Electron-Stimulated Desorption
• Electron Beam Irradiation Effects on Cl_2/GaAs
• GaAs Dry Etching Using Electron Beam Induced Surface Reaction : Etching
• New Selective Deposition Technology by Electron Beam Induced Surface Reaction
• Carbon-Nanotube Field-Effect Transistors with Very High Intrinsic Transconductance
• Sub-10-nm-Scale Lithography Using $p$-chloromethyl-methoxy-calix[4]arene Resist
• Behavior of Gallium Secondary Ion Intensity in Gallium Focused Ion Beam Secondary Ion Mass Spectrometry

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