Sakamoto Toshitsugu | Fundamental and Environmental Research Labs., NEC Corp., Tsukuba, Ibaraki 305-8501, Japan
スポンサーリンク
概要
- Sakamoto Toshitsuguの詳細を見る
- 同名の論文著者
- Fundamental and Environmental Research Labs., NEC Corp., Tsukuba, Ibaraki 305-8501, Japanの論文著者
関連著者
-
Sakamoto Toshitsugu
Fundamental Research Laboratories Nec Corporation
-
Sakamoto Toshitsugu
Fundamental and Environmental Research Labs., NEC Corp., Tsukuba, Ibaraki 305-8501, Japan
-
SAKAMOTO Toshitsugu
Fundamental Research Laboratories, NEC Corporation
-
Sakamoto Toshitugu
Faculty Of Engineering Science Osaka University
-
Shiokawa Takao
Semiconductor Laboratory Riken The Institute For Physical And Chemical Research
-
Sakamoto T
Department Of Communication Engineering Faculty Of Computer Science And System Engineering Okayama P
-
BABA Toshio
Fundamental Research Laboratories, NEC Corporation
-
SAKAMOTO Tetsuo
Institute of Industrial Science, The University of Tokyo
-
KAWAURA Hisao
Fundamental and Environmental Research Laboratories, NEC Corporation
-
Baba Toshio
Fundamental And Environmental Research Laboratories Nec Corporation
-
Baba T
Fundamental Research Laboratories Nec Corporation:(present Office)silicon System Laboratories Nec Co
-
Kawaura H
Fundamental Research Laboratories Nec Caporation
-
Fujita J
Crest-jst
-
OCHIAI Yukinori
Fundamental Res. Labs., NEC Corporation
-
Hwang Sung
School Of Electrical Engineering Korea University:institute Of Quantum Information Processing And Sy
-
Hwang Sung
Fundamental Research Laboratories Nec Corporation
-
MATSUI Shinji
Fundamental Res. Labs., NEC Corporation
-
Nakamura K
Department Of Electrical Engineering School Of Engineering Nagoya University
-
Hwang S
Department Of Electronics And Computer Engineering Korea University
-
Manaka Susumu
Fundamental Research Laboratories Nec Corporation
-
NAKAMURA Kazuo
Fundamental and Environmental Research Laboratories, NEC
-
Nakamura Kazuo
Fundamental And Environmental Research Laboratories Nec
-
HWANG Sung
Institute of Quantum Information Processing and Systems, University of Seoul:Department of Electronic Engineering, Korea University
-
Nomura E
Nec Corp. Ibaraki Jpn
-
Nomura Eiichi
Fundamental Research Laboratories Nec Corporation
-
Nomura Eiichi
Fundamental Research Labs Nec Corporation
-
MANAKO Shoko
Fundamental Res. Labs., NEC Corporation
-
FUJITA Jun-ichi
Fundamental Res. Labs., NEC Corporation
-
OHNISHI Yoshitake
Fundamental Research Laboratories, NEC Corporation
-
Sunamura H
Nec Corp. Ibaraki
-
HASEGAWA Tsuyoshi
ICORP, Japan Science and Technology Agency (JST)
-
Tsai Jaw-shen
Fundamental Research Laboratories Nec Corporation
-
SUNAMURA Hiroshi
Fundamental Research Laboratories, NEC Corporation
-
LEZEC Henri
Fundamental Research Laboratories, NEC Corporation
-
Lezec Henri
Fundamental Research Laboratories Nec Corporation:micrion Gmbh
-
Lezec Henri
Fundamental Research Laboratories Nec Corporation
-
NAKAMURA Yasunobu
Fundamental Research Laboratories, NEC Corporation
-
IIZUKA Takahiro
ULSI Device Development Labs., NEC
-
Nakamura Yasunobu
Fundamental Research Laboratories Nec Corporation
-
Ohnishi Yoshitake
Fundamental Research Laboratories Nec Corporation
-
Iizuka Takahiro
Ulsi Device Development Labs. Nec
-
Aono Masakazu
ICORP, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
-
Banno Naoki
Fundamental and Environmental Research Labs., NEC Corp., Tsukuba, Ibaraki 305-8501, Japan
-
Terabe Kazuya
ICORP, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
-
BABA Toshio
Fundamental Research Laboratories, NEC Corporation:(Present office)Silicon System Laboratories, NEC Corporation
-
Hasegawa Tsuyoshi
ICORP, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
著作論文
- Calixarene Electron Beam Resist for Nano-Lithography
- Multiple-Valued Memory Operation Using a Single-Electron Device : a Proposal and an Experimental Demonstration of a Ten-Valued Operation
- Observation of 77 K Staircase I-V Characteristics in 2DEG's Irradiated by a Focused Ion Beam
- Single Electron Digital Phase Modulator
- Study of Josephson-Quasiparticle Cycles in Superconducting Single-Electron Transistors
- Single-Electron Memory Fabricated from Doped Silicon-on-Insulator Film
- Hot Electron Transport in Si-MOSFETs
- Transport Properties in Sub-10-nm-gate EJ-MOSFETs
- Fabrication and Characterization of 14-nm-Gate-Length EJ-MOSFETs
- Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
- Effect of Ion Diffusion on Switching Voltage of Solid-Electrolyte Nanometer Switch