Sakamoto Toshitsugu | Fundamental Research Laboratories Nec Corporation
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概要
関連著者
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Sakamoto Toshitsugu
Fundamental Research Laboratories Nec Corporation
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Sakamoto Toshitsugu
Fundamental and Environmental Research Labs., NEC Corp., Tsukuba, Ibaraki 305-8501, Japan
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SAKAMOTO Toshitsugu
Fundamental Research Laboratories, NEC Corporation
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Sakamoto Toshitugu
Faculty Of Engineering Science Osaka University
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Shiokawa Takao
Semiconductor Laboratory Riken The Institute For Physical And Chemical Research
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Sakamoto T
Department Of Communication Engineering Faculty Of Computer Science And System Engineering Okayama P
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BABA Toshio
Fundamental Research Laboratories, NEC Corporation
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SAKAMOTO Tetsuo
Institute of Industrial Science, The University of Tokyo
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KAWAURA Hisao
Fundamental and Environmental Research Laboratories, NEC Corporation
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Baba Toshio
Fundamental And Environmental Research Laboratories Nec Corporation
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Baba T
Fundamental Research Laboratories Nec Corporation:(present Office)silicon System Laboratories Nec Co
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Kawaura H
Fundamental Research Laboratories Nec Caporation
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Fujita J
Crest-jst
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OCHIAI Yukinori
Fundamental Res. Labs., NEC Corporation
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Hwang Sung
School Of Electrical Engineering Korea University:institute Of Quantum Information Processing And Sy
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Hwang Sung
Fundamental Research Laboratories Nec Corporation
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MATSUI Shinji
Fundamental Res. Labs., NEC Corporation
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Nakamura K
Department Of Electrical Engineering School Of Engineering Nagoya University
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Hwang S
Department Of Electronics And Computer Engineering Korea University
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Manaka Susumu
Fundamental Research Laboratories Nec Corporation
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NAKAMURA Kazuo
Fundamental and Environmental Research Laboratories, NEC
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Nakamura Kazuo
Fundamental And Environmental Research Laboratories Nec
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HWANG Sung
Institute of Quantum Information Processing and Systems, University of Seoul:Department of Electronic Engineering, Korea University
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Nomura E
Nec Corp. Ibaraki Jpn
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Nomura Eiichi
Fundamental Research Laboratories Nec Corporation
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Nomura Eiichi
Fundamental Research Labs Nec Corporation
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MANAKO Shoko
Fundamental Res. Labs., NEC Corporation
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FUJITA Jun-ichi
Fundamental Res. Labs., NEC Corporation
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OHNISHI Yoshitake
Fundamental Research Laboratories, NEC Corporation
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Sunamura H
Nec Corp. Ibaraki
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HASEGAWA Tsuyoshi
ICORP, Japan Science and Technology Agency (JST)
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Tsai Jaw-shen
Fundamental Research Laboratories Nec Corporation
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SUNAMURA Hiroshi
Fundamental Research Laboratories, NEC Corporation
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LEZEC Henri
Fundamental Research Laboratories, NEC Corporation
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Lezec Henri
Fundamental Research Laboratories Nec Corporation:micrion Gmbh
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Lezec Henri
Fundamental Research Laboratories Nec Corporation
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NAKAMURA Yasunobu
Fundamental Research Laboratories, NEC Corporation
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IIZUKA Takahiro
ULSI Device Development Labs., NEC
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Nakamura Yasunobu
Fundamental Research Laboratories Nec Corporation
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Ohnishi Yoshitake
Fundamental Research Laboratories Nec Corporation
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Iizuka Takahiro
Ulsi Device Development Labs. Nec
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Aono Masakazu
ICORP, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
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Banno Naoki
Fundamental and Environmental Research Labs., NEC Corp., Tsukuba, Ibaraki 305-8501, Japan
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Terabe Kazuya
ICORP, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
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BABA Toshio
Fundamental Research Laboratories, NEC Corporation:(Present office)Silicon System Laboratories, NEC Corporation
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Hasegawa Tsuyoshi
ICORP, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
著作論文
- Calixarene Electron Beam Resist for Nano-Lithography
- Multiple-Valued Memory Operation Using a Single-Electron Device : a Proposal and an Experimental Demonstration of a Ten-Valued Operation
- Observation of 77 K Staircase I-V Characteristics in 2DEG's Irradiated by a Focused Ion Beam
- Single Electron Digital Phase Modulator
- Study of Josephson-Quasiparticle Cycles in Superconducting Single-Electron Transistors
- Single-Electron Memory Fabricated from Doped Silicon-on-Insulator Film
- Hot Electron Transport in Si-MOSFETs
- Transport Properties in Sub-10-nm-gate EJ-MOSFETs
- Fabrication and Characterization of 14-nm-Gate-Length EJ-MOSFETs
- Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
- Effect of Ion Diffusion on Switching Voltage of Solid-Electrolyte Nanometer Switch