Baba Toshio | Fundamental And Environmental Research Laboratories Nec Corporation
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概要
関連著者
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Baba Toshio
Fundamental And Environmental Research Laboratories Nec Corporation
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BABA Toshio
Fundamental Research Laboratories, NEC Corporation
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Baba T
Fundamental Research Laboratories Nec Corporation:(present Office)silicon System Laboratories Nec Co
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KAWAURA Hisao
Fundamental and Environmental Research Laboratories, NEC Corporation
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OGAWA Masaki
Fundamental Research Laboratories, NEC Corporation
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Uemura Tetsuya
Fundamental Research Laboratories Nec Corporation
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SAKAMOTO Toshitsugu
Fundamental Research Laboratories, NEC Corporation
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Sakamoto Toshitsugu
Fundamental Research Laboratories Nec Corporation
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Sakamoto Toshitsugu
Fundamental and Environmental Research Labs., NEC Corp., Tsukuba, Ibaraki 305-8501, Japan
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Mizuta Masashi
Fundamental Research Laboratries Nec Corporation
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Mizuta Masashi
Fundamental Reseach Laboratories Nec Corporation
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SAKAMOTO Tetsuo
Institute of Industrial Science, The University of Tokyo
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Sakamoto Toshitugu
Faculty Of Engineering Science Osaka University
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Shiokawa Takao
Semiconductor Laboratory Riken The Institute For Physical And Chemical Research
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Sakamoto T
Department Of Communication Engineering Faculty Of Computer Science And System Engineering Okayama P
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Kawaura H
Fundamental Research Laboratories Nec Caporation
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Mizuta Masashi
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
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OHATA Keiichi
Microelectronics Research Laboratories, NEC Corporation
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Ogawa Masaki
Fundamental Research Laboratories Nec Corporation
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OKUMI Shoji
Graduate School of Science, Nagoya University
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Omori Tsunehiko
Kek National Laboratory For High Energy Physics
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Okumi S
Nagoya Univ. Nagoya Jpn
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Matsuyama T
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
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Matsunaka Toshiyuki
Department Of Physics & Electronics Osaka Prefecture University
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TSUBATA Mitsuru
Nagoya University
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Yoshioka Masahiro
NMIJ AIST
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Takeuchi Yasunori
Kek National Laboratory For High Energy Physics
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Matsuyama Tetsuya
Department Of Physics And Electronics Faculty Of Engineering Osaka Prefecture University
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Yoshioka Masakazu
Kek National Laboratory For High Energy Physics
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Tawada Masafumi
Department Of Physics Nagoya University:(present Address)kek National Laboratory For High Energy Phy
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Takeuchi Y
Institute For Materials Research Tohoku University
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Togawa Kazuaki
Department Of Physics Faculty Of Science Nagoya University
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Nakanishi T
Graduate School Of Science Nagoya University
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Kurihara Y
Teikyo Heisei Univ. Chiba Jpn
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Kamiya Y
Kek Ibaraki Jpn
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Mizuta Masashi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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FUJIKATA Junichi
MIRAI-Selete
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OHASHI Keishi
MIRAI-Selete
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Uemura T
Sumitomo Electric Ind. Ltd. Hyogo Jpn
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Uemura T
Nec Corp. Ibaraki Jpn
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Uemura Tetsuya
System Devices And Fundamental Research Nec Corporation
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Fujita J
Crest-jst
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OCHIAI Yukinori
Fundamental Res. Labs., NEC Corporation
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KURIHARA Yoshimasa
KEK, High Energy Accelerator Research Organization
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OMORI Tsunehiko
KEK, High Energy Accelerator Research Organization
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ICHIKAWA Masakazu
Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP), c
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Mizutani Takashi
Fundamental Research Laboratories Nec Corporation
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OHASHI Keishi
Fundamental Research Laboratories, NEC Corporation
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Ishida M
Sii Nanotechnology Inc.
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TAKEUCHI Yasunori
KEK, National Laboratory for High Energy Physics
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YOSHIOKA Masakazu
KEK, National Laboratory for High Energy Physics
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ISHI Tsutomu
Fundamental and Environmental Research Laboratories, NEC Corporation
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MAKITA Kikuo
System Devices Research Laboratories, NEC Corporation
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Ichikawa Masakazu
Joint Research Center For Atom Technology
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership
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Ichikawa Masakazu
Joint Research Center For Atom Technology Angstrom Technology Partnership (jrcat-atp) C
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Matsumoto Yoshinari
Department Of Electrical And Electronic Engineering Toyo University
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Ichikawa Mitsuru
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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WATANABE Heiji
Fundamental Research Laboratories, NEC Corporation
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IWATA Naotaka
Fundamental Research Laboratories, NEC Corporation
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MATSUMOTO Yoshishige
Fundamental Research Laboratories, NEC Corporation
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Baba Toshio
Fundamental Research Laboratories Nec Corporation
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Makita Kikuo
System Devices Research Laboratories Nec Corporation
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Ishi Tsutomu
Nano Electronics Res. Labs. Nec Corp.
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Ohashi Keishi
Fundamental And Environmental Research Laboratories Nec Corporation
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Watanabe Heiji
Fundamental Research Laboratories Nec Corporation
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IWASA Masayuki
SII Nanotechnology Inc.
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Watanabe Hiroyuki
Semiconductor Leading Edge Technologies Inc.
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Ogawa M
Kobe Univerisity
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Iwata N
Fundamental Research Laboratories Nec Corporation
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Matsumoto Yoshishige
Fundamental Research Laboratories Nec Corporation
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Iwasa Masayuki
Sii Nanotechnology Inc. Tokyo Jpn
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NAKANISHI Tsutomu
Faculty of Pharmaceutical Sciences,Setsunan University
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SUZUKI Chihiro
Department of Neurology, Tohoku University Graduate School of Medicine
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ISHI Tsutomu
Nano Electronics Res. Labs., NEC Corp.
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Uemura T
Hokkaido Univ. Sapporo‐shi Jpn
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Uemura T
Fundamerntal Research Laboratories Nec Corporation
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Uemura T
Fundamental Research Laboratories Nec Corporation
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Yoshino Junji
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Aoyagi Hideki
Stanford Linear Accelerator Center Stanford University:(present Address) Nagoya University
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Aoyagi Hideki
College Of Engineering University Of Osaka Prefecture:(present Address)japan Synchrotron Radiation R
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MATSUI Shinji
Fundamental Res. Labs., NEC Corporation
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Sunamura H
Nec Corp. Ibaraki
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NAKANISHI Tsutomu
Department of Physics, Nagoya University
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Chun Y
System Devices And Fundamental Research Nec Corporation
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Yoshino J
Department Of Physics Tokyo Institute Of Technology
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CHUN Yong
Fundamental Research Laboratories, NEC Corporation
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TAKAHASHI Chikako
Faculty of Pharmaceutical Sciences, Chiba University
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TAWADA Masafumi
Department of Physics, Nagoya University
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NISHITANI Kazuharu
Accelerator Technology Corporation
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OKUMI Shoji
Department of Physics, Nagoya University
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TOGAWA Kazuaki
Department of Physics, Nagoya University
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KURIHARA Yoshimasa
National Laboratory for High Energy Physics (KEK) Tsukuba
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TAKEUCHI Yasunori
National Laboratory for High Energy Physics (KEK) Tsukuba
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YOSHIOKA Masakazu
National Laboratory for High Energy Physics (KEK) Tsukuba
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OMORI Tsunehiko
National Laboratory for High Energy Physics (KEK)
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NAKANISHI Tsutomu
Nagoya University
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OKUMI Syooji
Nagoya University
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TAWADA Mmasabumi
Nagoya University
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TOGAWA Kazuaki
Nagoya University
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ALLEY Raymond
Stanford Linear Accelerator Center, Stanford University
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CLENDENIN James
Stanford Linear Accelerator Center, Stanford University
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FRISCH Josef
Stanford Linear Accelerator Center, Stanford University
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MULHOLLAN Gregory
Stanford Linear Accelerator Center, Stanford University
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SAEZ Pablo
Stanford Linear Accelerator Center, Stanford University
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SCHULTZ David
Stanford Linear Accelerator Center, Stanford University
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TANG Huan
Stanford Linear Accelerator Center, Stanford University
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WITTE Klaus
Stanford Linear Accelerator Center, Stanford University
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OKUMI Shoji
Faculty of Science, Nagoya University
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TSUBATA Mitsuru
Faculty of Science, Nagoya University
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TAWADA Masafumi
Faculty of Science, Nagoya University
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TOGAWA Kazuaki
Faculty of Science, Nagoya University
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TANIMOTO Yasunori
Faculty of Science, Nagoya University
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FUJIKAWA Junichi
Fundamental and Environmental Research Laboratories, NEC Corporation
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FUJIKATA Junichi
Fundamental and Environmental Research Laboratories, NEC Corporation
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KUKIMOTO Hiroshi
Imaging Science and Engineering Laboratory,Tokyo Institute of Technology
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Takahashi Chikako
Faculty Of Science Nagoya University
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Takahashi Chikako
Faculty Of Pharmaceutical Sciences Chiba University
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Tang Huan
Stanford Linear Accelerator Center Stanford University
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Saez Pablo
Stanford Linear Accelerator Center Stanford University
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Witte Klaus
Stanford Linear Accelerator Center Stanford University
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Frisch Josef
Stanford Linear Accelerator Center Stanford University
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Schultz David
Stanford Linear Accelerator Center Stanford University
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Alley Raymond
Stanford Linear Accelerator Center Stanford University
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Clendenin James
Stanford Linear Accelerator Center Stanford University
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Mulhollan Gregory
Stanford Linear Accelerator Center Stanford University
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Suzuki Chihiro
Department Of Physics Nagoya University
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Barker John
Department Of Electronics And Engineering University Of Glasgow
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Manaka Susumu
Fundamental Research Laboratories Nec Corporation
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Ohata Keiichi
Microelectronics Research Laboratories
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Ohata Keiichi
Microelectronics Research Laboratories Nec Corporation
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Fujisawa Toshimasa
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Takahashi C
Ntt Telecommunications Energy Laboratories
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Kawaura Hisao
Fundamental Research Laboratories Nec Corporation
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Fujisawa Toshimasa
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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AL-MUDARES Mustafa
Department of Electronics and Engineering, University of Glasgow
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SUNAMURA Hiroshi
Fundamental Research Laboratories, NEC Corporation
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Matsumoto Y
Nara Inst. Sci. And Technol. Ikoma‐shi Jpn
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Baba T
Fundamental Research Laboratories Nec Corporation
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Suzuki Chihiro
Department Of Biomembrane And Biofunctional Chemistry Faculty Of Advanced Life Sciences Hokkaido Uni
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Furukawa A
Global Environment Research Division The National Institute For Environment Studies
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Kukimoto Hiroshi
Imaging Science And Engineering Lab. Tokyo Institute Of Technology
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IIZUKA Takahiro
ULSI Device Development Labs., NEC
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FURUKAWA Akio
Fundamental Research Laboratories, NEC Corporation
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Matsumoto Yuji
Materials And Structures Laboratory Tokyo Institute Of Technology
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Al-mudares Mustafa
Department Of Electronics And Engineering University Of Glasgow
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Kurihara Yoshimasa
National Laboratory For High Energy Physics (kek)
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Iizuka Takahiro
Ulsi Device Development Labs. Nec
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Nakanishi Tsutomu
Faculty Of Pharmaceutical Sciences Setsunan University
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Nakanishi Tsutomu
Department Of Mechanical Systems Engineering Faculty Of Engineering Miyazaki University
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Nakanishi Tsutomu
Faculty Of Engineering Miyazaki University
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Nakanishi Tsutomu
Department Of Materials Sciences Waseda Universit
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Okumi Shoji
Department of Physics, Faculty of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
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UEMURA Tetsuya
Fundamental Research Laboratories, NEC Corporation
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UEMURA Tetsuya
Fundamerntal Research Laboratories, NEC Corporation
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BABA Toshio
Fundamental Research Laboratories, NEC Corporation:(Present office)Silicon System Laboratories, NEC Corporation
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BABA Toshio
Fundamerntal Research Laboratories, NEC Corporation
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BABA Toshio
Fundamental Research Laboratories, NEC Corportion
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MIZUTA Masashi
Fundamental Research Laboratories, NEC Corportion
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Nakanishi Tsutomu
Department of Materials Science and Engineering, Waseda University, Tokyo 169-8555, Japan
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OKUMI Shoji
Department of Physics, Faculty of Science, Nagoya University
著作論文
- Characterization of Depletion-Type Surface Tunnel Transistors
- Surface Tunnel Transistors with Multiple Interband Tunnel Junctions (Special Issue on New Concept Device and Novel Architecture LSIs)
- First Observation of Negative Differential Resistance in Surface Tunnel Transistors
- Self-Aligned Surface Tunnel Transistors Fabricated by a Regrowth Technique
- Improved Negative Differential Resistance Characteristics in Surface Tunnel Transistors
- Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice
- A High Polarization and High Quantum Efficiency Photocathode Using a GaAs -AlGaAs Superlattice
- Highly Polarized Electron Source Using InGaAs-GaAs Strained-Layer Superlattice
- Highly Enhanced Speed and Efficiency of Si Nano-Photodiode with a Surface-Plasmon Antenna
- Si Nano-Photodiode with a Surface Plasmon Antenna
- Surface Tunnel Transistor: Gate-Controlled Lateral Interband Tunneling Device
- High Performance (AlAs/n-GaAs Superlattice)/GaAs 2DEGFETs with Stabilized Threshold Voltage
- Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
- DX Center-Like Trap in Selectively Si-Doped AlAs/GaAs Superlattices
- Thermal Stability of a Short Period AlAs/n-GaAs Superlattice
- The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration
- Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Simulation of Intrinsic Bistability in Resonant Tunneling Diodes
- Monte Carlo Simulation of Resonant Tunneling Diode
- Multiple-Valued Memory Operation Using a Single-Electron Device : a Proposal and an Experimental Demonstration of a Ten-Valued Operation
- Single-Electron Memory Fabricated from Doped Silicon-on-Insulator Film
- Hot Electron Transport in Si-MOSFETs
- Transport Properties in Sub-10-nm-gate EJ-MOSFETs
- Fabrication and Characterization of 14-nm-Gate-Length EJ-MOSFETs
- Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
- Direct Tunneling from Source to Drain in Nanometer-Scale Silicon Transistors
- 4.2 K Operation of InAlAs/InGaAs Heterojunction Bipolar Transistor
- Heavily Si-Doped GaAs and AlAs/n-GaAs Superlattice Grown by Molecular Beam Epitaxy
- Proposal for Surface Tunnel Transistors