Surface Tunnel Transistor: Gate-Controlled Lateral Interband Tunneling Device
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-03-15
著者
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Uemura T
Sumitomo Electric Ind. Ltd. Hyogo Jpn
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Uemura T
Nec Corp. Ibaraki Jpn
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Uemura Tetsuya
System Devices And Fundamental Research Nec Corporation
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Uemura Tetsuya
Fundamental Research Laboratories Nec Corporation
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BABA Toshio
Fundamental Research Laboratories, NEC Corporation
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Baba Toshio
Fundamental And Environmental Research Laboratories Nec Corporation
関連論文
- Characterization of Depletion-Type Surface Tunnel Transistors
- Surface Tunnel Transistors with Multiple Interband Tunnel Junctions (Special Issue on New Concept Device and Novel Architecture LSIs)
- Design and Analysis of Resonant-Tunneling-Diode (RTD) Based High Performance Memory System (Special Issue on Integrated Electronics and New System Paradigms)
- First Observation of Negative Differential Resistance in Surface Tunnel Transistors
- Fabrication of Self-Aligned Surface Tunnel Transistors with a 80-nm Gate Length
- Self-Aligned Surface Tunnel Transistors Fabricated by a Regrowth Technique
- Improved Negative Differential Resistance Characteristics in Surface Tunnel Transistors
- Quantum-efficiency Dependence of the Spin Polarization of Photoemission from a GaAs-AlGaAs Superlattice
- A High Polarization and High Quantum Efficiency Photocathode Using a GaAs -AlGaAs Superlattice
- Highly Polarized Electron Source Using InGaAs-GaAs Strained-Layer Superlattice
- Highly Enhanced Speed and Efficiency of Si Nano-Photodiode with a Surface-Plasmon Antenna
- Si Nano-Photodiode with a Surface Plasmon Antenna
- Surface Tunnel Transistor: Gate-Controlled Lateral Interband Tunneling Device
- High Performance (AlAs/n-GaAs Superlattice)/GaAs 2DEGFETs with Stabilized Threshold Voltage
- Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
- Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
- Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
- Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System : a Novel Short Period AlAs/n-GaAs Superlattice
- DX Center-Like Trap in Selectively Si-Doped AlAs/GaAs Superlattices
- Thermal Stability of a Short Period AlAs/n-GaAs Superlattice
- The Local-Environment-Dependent DX Centers : Evidence for the Single Energy Level with a Specified Configuration
- Mechanism of Layer-by-Layer Oxidation of Si(001)Surfaces by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO_2/Si Interfaces
- Simulation of Intrinsic Bistability in Resonant Tunneling Diodes
- Monte Carlo Simulation of Resonant Tunneling Diode
- Multiple-Valued Memory Operation Using a Single-Electron Device : a Proposal and an Experimental Demonstration of a Ten-Valued Operation
- Single-Electron Memory Fabricated from Doped Silicon-on-Insulator Film
- Hot Electron Transport in Si-MOSFETs
- Transport Properties in Sub-10-nm-gate EJ-MOSFETs
- Fabrication and Characterization of 14-nm-Gate-Length EJ-MOSFETs
- Proposal of Pseudo Source and Drain MOSFETs for Evaluating 10-nm Gate MOSFETs
- Direct Tunneling from Source to Drain in Nanometer-Scale Silicon Transistors
- 4.2 K Operation of InAlAs/InGaAs Heterojunction Bipolar Transistor
- Heavily Si-Doped GaAs and AlAs/n-GaAs Superlattice Grown by Molecular Beam Epitaxy
- Proposal for Surface Tunnel Transistors