Fabrication of Self-Aligned Surface Tunnel Transistors with a 80-nm Gate Length
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-12-15
著者
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Uemura T
Sumitomo Electric Ind. Ltd. Hyogo Jpn
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Uemura T
Nec Corp. Ibaraki Jpn
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Uemura Tetsuya
System Devices And Fundamental Research Nec Corporation
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Chun Y
System Devices And Fundamental Research Nec Corporation
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CHUN Yong
System Devices and Fundamental Research, NEC Corporation
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BABA Toshio
System Devices and Fundamental Research, NEC Corporation
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Chun Yong
System Devices And Fundamental Research Nec Corporation
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Baba T
Fundamental Research Laboratories Nec Corporation:(present Office)silicon System Laboratories Nec Co
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