Enhanced Two-Dimensional Growth of GaAs on InP by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-08-01

著者

• Kawabe M

  Nikko Materials Co. Ltd. Saitama Jpn

• Kawabe Mitsuo

  Institute Of Materials Science University Of Tsukuba

• Kawabe Mitsuo

  Institute Of Applied Physics University Of Tsukuba

• OKADA Yoshitaka

  Institute of Applied Physics. University of Tsukuba

• Okada Y

  Sumitomo Heavy Ind. Ltd. Tokyo Jpn

• Okada Y

  Institute Of Applied Physics. University Of Tsukuba

• Okada Yoshitaka

  Institute Of Applied Physics University Of Tsukuba

• CHUN Yong

  Institute of Materials Science, University of Tsukuba

• Chun Y

  System Devices And Fundamental Research Nec Corporation

• Chun Yong

  Institute Of Materials Science University Of Tsukuba

• Kawabe M

  Institute Of Applied Physics University Of Tsukuba

関連論文

• Lateral-Coupling-Induced Modification of Density of States and Exciton Dynamics in High-Density Ordered In_ Ga_ As/GaAs(311)B Quantum Dot Arrays(Optical Properties of Condensed Matter)
• Comparison of Optical Properties of In_Ga_As/GaAs(311)B Two-Dimensional Quantum Dot Superlattices and Quantum Wells
• Two-Dimensional In_Ga_As/GaAs Quantum Dot Superlattices Realized by Self-Organized Epitaxial Growth
• Effect of Charge Distribution in Quantum Dots Array on Two-Dimensional Electron Gas
• Magnetoluminescence Studies of Highly Packed InGaAs Self-organized Quantum Dots on GaAs(311)B
• The Procedure to Realize Two-Dimensional Quantum Dot Superlattices : From Incoherently Coupled to Coherently Coupled Quantum Dot Arrays
• High-Quality GaAs Films on Si Substrates Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy for Solar Cell Applications
• Anisotropic Transport Properties in Twin-Free Bi_2Sr_2CaCu_2O_x Thin Films on Tilted LaAlO_3 (001) Substrates
• Composition Control of Al_xGa_As and New Type of Superlattice by Pulsed Molecular Beam
• Surfactant Effects of Atomic Hydrogen on Low-Temperature Growth of InAs on InP
• Enhanced Two-Dimensional Growth of GaAs on InP by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
• Molecular and Crystal Structures of 2-(All-trans-Retinylidene)-Indan-1,3-Dione
• Interference Area of Universal Conductance Fluctuations in Narrow GaAs/AlGaAs Wires
• Conductance Fluctuations in GaAs/AlGaAs Narrow Wires in Quasi-Ballistic Regime
• Fabrication of Self-Aligned Surface Tunnel Transistors with a 80-nm Gate Length
• Self-Aligned Surface Tunnel Transistors Fabricated by a Regrowth Technique
• Cracking Efficiency of Hydrogen with Tungsten Filament in Molecular Beam Epitaxy
• Atomic Hydrogen-Assisted GaAs Molecular Beam Epitaxy
• GaAs/AlGaAs Quantum Wells Grown by Low-Temperature Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
• Second-Harmonic Generation from Single Crystals of N-Substituted 4-Nitroanilines
• 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
• Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam Epilaxy
• Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy
• Reduction of a Highly-Resistive Layer at an Interrupted-Interface of GaAs Grown by MBE
• Observation of Solitonlike Excitations in All-trans-β-Carotene Single Crystals
• Fabrication of InGaN Multiple Quantum Wells Grown by Hydrogen FluX Modulation in RF Molecular Beam Epitaxy : Semiconductors
• Effects of Atomic Hydrogen on the Indium Incorporation in InGaN Grown by RF-Molecular Beam Epitaxy
• Reduction Mechanism of Dislocation Density in GaAs Films on Si Substrates
• Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam Epitaxy
• Array of the Self-Organized InGaAs Quantum Dots on GaAs (311)B Substrates by Atomic Hydrogen-Assisted Molecular Beam Epitaxy
• Anisotropic Lateral Growth of GaAs by Molecular Beam Epitaxy
• A Molecular Beam Epitaxy Approach to Quantum Dot Arrays
• Fabrication of GaAs Quantum Wire Structures by Hydrogen-Assisted Molecular Beam Epitaxy
• Epitaxial Growth of Al on (NH_4)_2S_x-Treated GaAs
• Effect of Atomic Hydrogen on GaAs Growth on GaAs(311)A Substrate in Molecular Beam Epitaxy
• Formation of High-Density Quantum Dot Arrays by Molecular Beam Epitaxy ( Quantum Dot Structures)
• Correlation Field Analysis of the Influence of Device Geometry and Bulk Disorder on Electron Interference in Quantum Wires
• Surface Diffusion of Bi_2Sr_2CuO_ Thin Films Grown by Molecular Beam Epitaxy
• Bi_2Sr_2CuO_x Thin Films with (011) Vicinal Surfaces Fabricated on Vicinal LaSrGaO_4(110) by Molecular Beam Epitaxy
• Two-Dimensional Epitaxial Growth of Bi_2Sr_2CuO_x on Tilted SrTiO_3(001) Substrates Studied by Reflection High Energy Electron Diffraction
• Layer-by-Layer Growth of Bi-Sr-Ca-Cu-O Superconducting Films by Molecular Beam Epitaxy
• Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation
• Role of Excess Bi in SrBi_2Ta_2O_9 Thin Film Prepared Using Chemical Liquid Deposition and Sol-Gel Method
• Shubnikov-de Haas Oscillations in a Narrow GaAs/AlGaAs Wire
• Aperiodic Conductance Fluctuations in a Narrow GaAs/AlGaAs Wire
• Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
• Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
• Be Doping Effect on Growth Kinetics of GaAs Grown by MBE
• Molecular Beam Epitaxy of Controlled Single Domain GaAs on Si (100)
• Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam Epitaxy
• Low Temperature Magnetoresistance of a Quasi-Ballistic Narrow Wire Confined by Split Metal Gates
• Size Dependence of Universal Conductance Fluctuations in Narrow N^+ -GaAs Wires : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Localization, Mesoscopic Systems
• Dynamic Behavior of 30-ps Pulsed-Laser Annealing in Ion-Implanted Si
• Preferential Desorption of Ga from Al_xGa_As Grown by Molecular Beam Epitaxy
• Effect of AlAs Buffer Layers on Epitaxial Growth of GaAs on Si (100)
• Photoluminescence of Al_xGa_As/Al_yGa_As Multiguantum Wells Grown by Pulsed Molecular Beam Epitaxy
• Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen Irradiation
• Self-Organization of High-Density III-V Quantum Dots on High-Index Substrates
• Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy
• Growth Mechanism of Surface Dots Self-Assembled on InP (311)B Substrate
• Effects of Atomic Hydrogen on the Growth of GaN by RF-Molecular Beam Epitaxy
• Growth of GaN by Atomic Hydrogen-Assisted Molecular Beam Epitaxy
• Preparation of Ferroelectric Sr_Bi_Ta_2O_9 Thin Films by Misted Deposition Method Using Alkoxide Solution(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
• Formation of Quantum Dot Structures by Atomic Hydrogen Assisted Selective Area Molecular Beam Epitaxy
• Enhanced Solid-Phase Crystallization of Amorphous Si by Plasma Treatment Using Reactive Ion Etching
• Selective Solid-Phase Crystallization of Amorphous Si by Oxygen Plasma Treatment
• Growth of GaNAs films with As_2 source in atomic hydrogen-assisted molecular beam epitaxy
• Fabrication of GaAs/GaInNAs Heterojunction Solar Cells Applicable To High-Efficiency Multi-junction Tandem Structures
• Fiber-Optic Pulse Delay Using Composite Zone Plates for Very Fast Optoelectronics : Waves, Optics and Quantum Electronics
• Elementary Processes in Atomic Hydrogen-Assisted GaAs Molecular Beam Epitaxy
• Low Temperature Surface Cleaning of InP by Irradiation of Atomic Hydrogen
• Atomic Image Observation of Hydrogen-Saturated Si(100) Prepared by Atomic Hydrogen Irradiation
• Selective Growth of GaAs by Molecular Beam Epitaxy
• Low Dislocation Density GaAs on Vicinal Si(100) Grown by Molecular Beam Epitaxy with Atomic Hydrogen Irradiation
• Low-Temperature Substrate Annealing of Vicinal Si(100) for Epitaxial Growth of GaAs on Si
• A Blazed Grating Fabricated by Synchrotron Radiation Lithography
• Focusing Characteristics of High-Efficiency Fresnel Zone Plate Fabricated by Deep Ultraviolet Lithography
• Fermi Level Effect on Compositional Disordering of AlAs/GaAs Superlattice
• Growth of InGaAs Quantum Dots on the AlGaAs(311)B Surface
• Nanoscale Mapping of Built-in Potential in GaAs p–n Junction Using Light-Modulated Scanning Tunneling Microscopy

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