Self-Organization of High-Density III-V Quantum Dots on High-Index Substrates
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概要
- 論文の詳細を見る
Ordered In_<0.4>Ga_<0.6>As quantum dots (QDs), with the density of l0^9cm^<-2>-10^<11>cm^<-2>, are fabricated on GaAs (311) B substrates by atomic-hydrogen assisted molecular beam epitaxy. The density and the dot size are mainly changed by the growth temperature between 460℃ and 520℃. In sharp contrast to InAs, where we can hardly observe any ordering, and coalescence or merging of dots occurs beyond a thickness of 4 monolayers, the high-density In_<0.4>Ga_<0.6>As QDs do not coalesce even when the QDs are in contact with each other. The inhomogeneuos distribution of In and Ga in the QDs which are In rich at the surface is found to be responsible for this unusual behavior by reflection high energy electron diffraction studies. The atomic force microscope images show that a surface coverage of nearly 100% can be achieved. It implies the existence of lateral coupling between QDs, which is strongly supported by the photoluminscence measurements.
- 社団法人応用物理学会の論文
- 1999-01-30
著者
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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LAN Sheng
Institute of Materials Science, University of Tsukuba
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Lan Sheng
Institute Of Applied Physics University Of Tsukuba
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Lan Sheng
Institute Of Materials Science University Of Tsukuba
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AKAHANE Kohichi
Institute of Materials Science, University of Tsukuba
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OKINO Kennji
Institute of Materials Science, University of Tsukuba
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OKADA Yositaka
Institute of Materials Science, University of Tsukuba
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KOYAMA Hiromichi
Institute of Materials Science, University of Tsukuba
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Koyama Hiromichi
Institute Of Materials Science University Of Tsukuba
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Okino Kennji
Institute Of Materials Science University Of Tsukuba
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Okada Yositaka
Institute Of Materials Science University Of Tsukuba
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Akahane Kohichi
Institute Of Materials Science University Of Tsukuba
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