Effects of Atomic Hydrogen on the Growth of GaN by RF-Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
We have studied the effects of atomic hydrogen (H) irradiation under near-optimal GaN growth conditions. Atomic H irradiation during GaN growth suppresses three-dimensional growth and promotes two-dimensional growth under a slightly nitrogen-rich growth condition. This may suggest an increase in Ga surface diffusion length. The photoluminescence intensity of sample with atomic H irradiation (with H) grown under an optimal condition was approximately four times as high as that of sample without atomic H irradiation (without H), and full-widths at half maximum (FWHM) was reduced by 13% for with H. In addition, roughness was reduced by 42% for with H. Thus atomic H irradiation of GaN grown under the optimal condition is effective in improving the crystal quality of GaN. We have also studied the change in surface reconstruction by changing the amount of atomic H and substrate temperature. The origin of the observed (5×5) reconstruction pattern is related to H adsorption on Ga atoms.
- 社団法人応用物理学会の論文
- 1999-03-01
著者
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Kawabe M
Nikko Materials Co. Ltd. Saitama Jpn
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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OKADA Yoshitaka
Institute of Applied Physics. University of Tsukuba
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Okada Y
Sumitomo Heavy Ind. Ltd. Tokyo Jpn
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Okada Y
Univ. Tsukuba Ibaraki Jpn
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Okada Y
Institute Of Applied Physics. University Of Tsukuba
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Okada Yoshitaka
Institute Of Applied Physics University Of Tsukuba
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OKAMOTO Yoshihiro
Institute of Applied Physics, University of Tsukuba
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Kawabe M
Institute Of Applied Physics University Of Tsukuba
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Okada Yasumasa
Electrotechnical Laboratory
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HASHIGUCHI Shinji
Institute of Materials Science, University of Tsukuba
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Hashiguchi S
Kyoto Inst. Technol. Kyoto Jpn
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