Etching Characterization of {001} Semi-Insulating GaAs Wafers
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概要
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The characteristics of {001} semi-insulating GaAs wafers have been investigated by the etching/optical microscopy. New etch features such as groove have been revealed in only LEC crystals together with ridge features by an AB etch, but not in boat-grown crystals. The groove features are specifically revealed on gathering and twisting dislocations such as cell or lineage structures, and coincide with each dislocation lying near the surface. Small pits along the ridge features have been revealed in undoped LEC crystal, but not in andoped boat frown crystals. The distribution of the ridge features with the small pits correlates with that of 0.80 eV photoluminescence intensity in the wafer.
- 社団法人応用物理学会の論文
- 1983-03-20
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