Mechanism of a Reduction of Dislocation Densities in Vertical-Gradient-Freeze-Grown GaAs Single Crystals
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概要
- 論文の詳細を見る
In gallium arsenide single crystal grown by using a sealed ampoule procedure based on the vertical gradient freeze method, dislocation elimination with an increasing fraction of melt solidified was observed by chemical etching and X-ray topography. It is found that the dislocation density is as low as 10^3 cm^<-2> in the tail end of the 60-mm-long ingot. The mechanism of the reduction of dislocation densities is discussed in terms of the loop formation.
- 社団法人応用物理学会の論文
- 1990-11-20
著者
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HASHIMOTO Satoshi
Kyoto University of Education
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Okada Yasumasa
Electrotechnical Laboratory
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Sakuragi Shiro
Union Material Inc.
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