Preparation of Ferroelectric Sr_<0.7>Bi_<2.3>Ta_2O_9 Thin Films by Misted Deposition Method Using Alkoxide Solution(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
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概要
- 論文の詳細を見る
Sr_<0.7>Bi_<2.3>Ta_2O_9 (SBT) films are drawing attention as fatigue-free materials. We prepared an SBT film containing discontinuous crystals in the Bi-layered compound using a misted deposition method. In comparison to films prepared by the spin-on method, leakage current was low and spontaneous polarization is high but saturarion performance was low. The low saturation performance seems attributable to the inclusion of discontinuous crystals in the Bi-layered compound, while the low leakage current may be explained by the film's smaller, denser particles, which form a film without voids, resulting in higher uniformity. The misted deposition method has advantages of finer grain size and higher uniformity.
- 社団法人電子情報通信学会の論文
- 1998-04-25
著者
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Okada Y
Sumitomo Heavy Ind. Ltd. Tokyo Jpn
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Okada Y
Univ. Tsukuba Ibaraki Jpn
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Okada Y
Institute Of Applied Physics. University Of Tsukuba
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Koiwa Ichiro
Semiconductor Technology Laboratories Oki Electric Industry Co. Ltd.
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Koiwa Ichiro
Department Of Applied Chemistry Science And Engineering Waseda University
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Koiwa Ichiro
The Authors Are With Research And Development Group Oki Electric Industry Co. Ltd.
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Mita J
Research Laboratory Oki Electric Industry Corporation Ltd.
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Okada Yasumasa
Electrotechnical Laboratory
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OKADA Yukihisa
The authors are with Research and Development Group, Oki Electric Industry Co., Ltd.
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MITA Juro
The authors are with Microsystems Technology Laboratory, Oki Electric Industry Co., Ltd.
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