Electron-Beam-Induced Charge Collection Microscopy of Undoped LEC GaAs
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概要
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Electron-beam-induced charge collection microscopy has been applied to the microscopic investigation of uniformity in undoped LEC (100) GaAs wafers. Defects such as growth striations and dislocation lines are observed in semiconducting specimens and cellular dislocation structures in semi-insulating specimens. It has been shown that this method is a useful technique for nondestructive microscopic characterization of undoped LEC GaAs wafers.
- 社団法人応用物理学会の論文
- 1984-02-20
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