Trap-Controlled Current Oscillations in High-Resistivity n-InP
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概要
- 論文の詳細を見る
Trap-controlled current oscillations similar to those previously observed in high-resistivity n-GaAs are found in high-resistivity Cu-doped n-InP under illumination at or below room temperature. Low temperature measurements show that the oscillation is due to the periodic generation of a traveling high-field domain. The oscillation is considered to be generated by the negative differential conductivity due to the preferential capture of upper-valley electrons. Velocity-field characteristics based on the above mechanism have been calculated. Observed threshold fields are explained qualitatively by the characteristics. The illumination intensity and the light wavelength dependences of the domain velocity are also studied.
- 社団法人応用物理学会の論文
- 1973-11-05
著者
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MIKOSHIBA Nobuo
Electrotechnical Laboratory
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TOKUMARU Yozo
Electrotechnical Laboratory
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Mikoshiba Nobuo
Electrotechnica Laboratory
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