Interaction of Conduction Electrons with Acoustic Waves in Many-Valley Semiconductors

概要

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A semi-classical theory is given for explaining the characteristics of the interaction of conduction electrons with acoustic waves in many-valley semiconductors such as n-Ge. In general, the ultrasonic absorption coefficient can be written as Λ = Λ_P + Λ_K, where Λ_P is due to the change of the deformation potential energy of electrons caused by net intervalley transitions. Λ_K due to the change of the kinetic energy caused by intravalley transitions. The acousto-electromotive force can be also written as F = F_P + F_K. In the low frequency range the dominant terms are Λ_P and F_P, but Λ_K and F_K Predominate in sufficiently high frequency range. For longitudinal waves propagating in the <110> direction and transverse waves propagating in the <100> direction and polarized in the <010> direction, F is identical with the formula of Weinreich-Sanders-White in the low frequency range. But in contrast to their formula, F does not decrease in the high frequency range owing to the increase of F_K and has the same order of magnitude as that for longitudinal waves in simple semiconductors. In special cases such as for longitudinal waves propagating in the <100> direction and transverse waves propagating in the <110> direction and polarized in the <11^^-0> direction, Λ_P = F_P = 0 and then the interaction becomes essentially identical with that in simple semiconductors.
社団法人日本物理学会の論文
1960-07-05