Effects of Uniaxial Stress and Magnetic Field on the Low-Temperature Thermal Conductivity of p-Type Ge and Si
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概要
- 論文の詳細を見る
Uniaxial stress dependence of the low-temperature thermal conductivity of lightly-doped p-type Ge and Si is calculated in detail by taking account of elastic and inelastic phonon scattering by holes bound to acceptor impurities. The stress modifies the temperature dependence as well as the magnitude of the thermal conductivity K(T). The most clearcut prediction is that K(T) of p-Si under the stress exhibits a dip as a function of temperature, which gives a direct evidence for the contribution of inelastic scattering to K(T). It is shown that a magnetic field also gives rise to a considerable change in K(T) of p-Si. In this connection, a brief discussion is given on the ultrasonic paramagnetic resonance of acceptor holes.
- 社団法人日本物理学会の論文
- 1971-07-05
著者
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MIKOSHIBA Nobuo
Electrotechnical Laboratory
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Suzuki Katsuo
Electrotechnical Laboratory
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Mikoshiba Nobuo
Electrotechnica Laboratory
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