On the Low-Temperature Thermal Conductivity of n-Ge
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概要
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The contributions of inelastic and elastic phonon scattering by neutral donors to the low-temperature thermal resistance of Ge are calculated in detail. It is shown that the inelastic and elastic scattering mechanisms make almost the same contribution to the thermal resistance in Sb-doped Ge. The sum of the both contributions gives a good agreement with experiments.
- 社団法人日本物理学会の論文
- 1971-07-05
著者
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MIKOSHIBA Nobuo
Electrotechnical Laboratory
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Suzuki Katsuo
Electrotechnical Laboratory
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Mikoshiba Nobuo
Electrotechnica Laboratory
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