Helical Dislocations and Dislocation Loops in silicon Induced by Platinum Diffusion
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1966-09-15
著者
-
KIKUCHI Makoto
Electrotechnical Laboratory
-
TOKUMARU Yozo
Electrotechnical Laboratory
-
Kikuchi Makoto
Electorotechnical Laboratory
関連論文
- The Electric Field Enhancement (EFE Effect in Sogicon)
- Further Experimental Results on the SOGICON Characteristics
- Light Induced Negative Resistance in High Resistivity N-type Silicon
- Oscillation Phenomena in High Resistivity Germanium Rod
- Dependence of Acoustoelectric Current Oscillation in InSb on Azimuthal Angle of Transverse Magnetic Field
- Acoustoelectric Current Oscillation in InSb and Its Dependence on the Transverse Magnetic Field
- Sound Velocity Transit of High Field Domain in GaAs under Acoustoelectric Oscillation
- Continuous Current Oscillation in GaAs Caused by Acoustoelectric Effect
- Frequency Spectrum of Microwave Emission from GaAs
- Determination of the Density of State Distribution of a-Si: H by Isothermal Capacitance Transient Spectroscopy
- Experimental Observations of Undamped Current Oscillations in CdSe Single Crystals
- Observations of Impurity Precipitation in CdSe Single Crystals
- Observation of Current Saturation and Oscillation in CdSe Single Crystals by Local Illumination
- Observations of Oscillation in CdSe Single Crystals compensated with Cu
- Phase Shift Spectroscopy of Modulated Photocurrent: Its Application to Gold Levels in Crystalline Si
- Scanning Optical Fiber Microscope for High Resolution Laser Beam Induced Current Image Observation of Semiconductor Defects
- Current Saturation and Oscillation in Photosensitive GaAs
- DLTS Measurement on Au-Doped Si p^+n Junctions and Its Computer Simulation
- Properties of Silicon Doped with Nickel
- Deep Levels Associated with Nitrogen in Silicon
- A Modulated DLTS Method for Large Signal Analysis (C^2-DLTS)
- Deep Levels in n-Type Undoped and Te-doped InSb Crystals
- Electron-Beam-Induced Charge Collection Microscopy of Undoped LEC GaAs
- Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level Parameters
- Current Oscillation and Light Probe Measurement of High-Field Domain Velocity in Photo-Excited High-Resistivity GaAs
- SEM-EBIC Investigations of Semi-Insulating Undoped LEC-GaAs
- Current Oscillations and High-Field Domains in Photoexcited High-Resistivity GaAs
- Helical Dislocations and Dislocation Loops in silicon Induced by Platinum Diffusion
- Switching Time and I-V Characteristic of Cu-Doped Ge Diodes
- Comments on "Endotherm in Switch-on Process in Semiconducting Glasses
- Generation of Large Dislocation Loops in Silicon Crystals
- Hexagonal Platelets Observed in Nickel Diffused Silicon
- Anomalous Etch Patterns in Highly Doped Silicon
- Infrared Observation of Anomalous Patterns in Highly Doped Silicon
- A Simlpler Method for Removing Copper from Germanium
- Etch Patterns and Crystallographic Polarity in Hexagonal ZnS
- Generation of Scratch-Induced Dislocations in Silicon and Its Orientation Dependence
- Trap-Controlled Current Oscillations in High-Resistivity n-InP
- Negative Differential Conductivity and Current Oscillation in p-CdTe
- Phase Memory Effect in Photocurrent Oscillation Due to Trap-Controlled Domain Propagation
- Helical Dislocations in Highly Te-Doped GaAs Crystals
- Characteristic Operations of High-Resistivity GaAs Oscillators
- Static N-Type Negative Differential Conductivity in Semiconductors Induced by Thermal Quenching of Photoconductivity
- Observation of Microplasma Pulses and Electroluminescence in Gallium Phosphide Single Crystal
- Visible Light Emission and Microplasma Phenomena in Silicon p-n Junction, I.
- Observations of GaP Diffused Junctions
- Some Observations on Germanium Bi-crystals
- Transient Carrier Transport in Relaxation Case GaAs
- Etch-Figure in CdS Single Crystals
- Electroluminescence in Gallium Phosphide Single Crystals
- Preparation of Gallium Phosphide Crystals and Their Etch Pattern
- Avalanche Breakdown in CdS Single Crystal
- Avalanche Electroluminescence in CdS Single Crystal
- A Simple Method for Measuring Capacity vs Voltage Characteristics of Reverse-Biased GaP Diffused Junctions
- Quenching Effect of the Photoconductivity Decay in CdS
- Photoconductivity of Cd-ZnS Mixed Crystal
- Low-Frequency Photocurrent Oscillations and Trapping Levels in High-Resistivity GaAs Doped with Oxygen
- Visible Light Emission from Germanium Diffused p-n Junction
- Energy Gap Discrepancy in Amorphous Semiconductors of As-Te-Ge System
- Laser Beam Deflection with CdS Single Crystal
- Observations of Negative Resistance and Oscillation Phenomena in the Forward Direction of Point Contact Semiconductor Diodes
- Current Oscillation in InSb Highly Sensitive to Magnetic Field
- Current Saturation and Undamped Oscillation in CdTe Single Crystals
- Observation of Coherent Oscillation in Germanium
- On the Backward Leakage Current in the Alloyed Germanium p-n Junction
- Observation of the Lateral Photovoltage by Surface Field Effect
- Some Experiments on the Germanium Surface Layer
- Transient Phenomena in the Backward Direction of Germanium Crystal Rectifiers
- Visible Light Emission and Microplasma Phenomena in Silicon p-n Junction : II. Classification of weak spots in diffused p-n junctions
- A Microscope Study of Etched Germanium Surfaces
- The "Sogicon" : A New Type of Semiconductor Oscillator
- Thermocompression Bonding to GaP Crystals
- Possible Evidence for the Light Induced Plasticity in Germanium
- Negative Resistance in the Forward Direction of Semiconductor Point Contact Diodes
- Coherent Oscillation from Forward-Biased Point Contact on Silicon Single Crystals
- Visible Light Emission from Metal-Silicon Contact
- Long Period Effects in Germanium Crystal Rectifiers