Observations of Negative Resistance and Oscillation Phenomena in the Forward Direction of Point Contact Semiconductor Diodes
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Coherent oscillation has been found in the forward-biased point contact on n-type silicon and p-type germanium. It has been verified by subsequent experiments that the oscillation is correlated with the negative resistance phenomena. The occurrence of the negative resistance and oscillation phenomena is dependent on the choice of the material used for the metal point, and it is more difficult to observe these phenomena in n-type germanium and p-type silicon than in p-type germanium and n-type silicon. Experimental observations of the negative resistance and related effects are mentioned. Although no definite model can be proposed at present, thermal effects and avalanche injection at low-high junction are ruled out from the possibilities for the explanation of the above mentioned results.
- 社団法人応用物理学会の論文
- 1963-01-15
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