Transient Carrier Transport in Relaxation Case GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1976-02-05
著者
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KIKUCHI Makoto
Electrotechnical Laboratory
-
OKUSHI Hideyo
Electrotechnical Laboratory
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IIZIMA Sigeru
Electrotechnical Laboratory
-
Kikuchi Makoto
Electorotechnical Laboratory
関連論文
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- Further Experimental Results on the SOGICON Characteristics
- Light Induced Negative Resistance in High Resistivity N-type Silicon
- Oscillation Phenomena in High Resistivity Germanium Rod
- Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
- A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si: H Films
- Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy
- Effect of Light Soaking Temperature on the Metastable Defect Distribution in Magnetron Sputtered Hydrogenated Amorphous Silicon Films
- Dependence of Acoustoelectric Current Oscillation in InSb on Azimuthal Angle of Transverse Magnetic Field
- Acoustoelectric Current Oscillation in InSb and Its Dependence on the Transverse Magnetic Field
- Sound Velocity Transit of High Field Domain in GaAs under Acoustoelectric Oscillation
- Continuous Current Oscillation in GaAs Caused by Acoustoelectric Effect
- Frequency Spectrum of Microwave Emission from GaAs
- n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition
- High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron
- The Staebler-Wronski Effect on Defect Luminescence in Hydrogenated Amorphous Silicon
- Characteristics of Schottky Barrier Diodes in P-doped Amorphous Si : H : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption
- Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent
- Determination of the Density of State Distribution of a-Si: H by Isothermal Capacitance Transient Spectroscopy
- Characteristics of Schottky Barrier Diodes in Reactively Sputtered Amorphous Si:H : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- Boron Doping of Hydrogenated Silicon Thin Films
- Electrical Characterization of SrTiO_3 Thin Films Grown on Nb-Doped SrTiO_3 Single Crystals
- Experimental Observations of Undamped Current Oscillations in CdSe Single Crystals
- Observations of Impurity Precipitation in CdSe Single Crystals
- Observation of Current Saturation and Oscillation in CdSe Single Crystals by Local Illumination
- Observations of Oscillation in CdSe Single Crystals compensated with Cu
- Nonlinear Effects Excitonic Emission from High Quality Homoepitaxial Diamond Films
- Junction Properties and Gap States of ZnO Thin Film Prepared by Sol-Get Process
- Preparation of n-ZnO/p-Si Heterojunction by Sol-Gel Process
- Current Saturation and Oscillation in Photosensitive GaAs
- DLTS Measurement on Au-Doped Si p^+n Junctions and Its Computer Simulation
- Deep Levels Associated with Nitrogen in Silicon
- A Modulated DLTS Method for Large Signal Analysis (C^2-DLTS)
- Deep Levels in n-Type Undoped and Te-doped InSb Crystals
- Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level Parameters
- Current Oscillation and Light Probe Measurement of High-Field Domain Velocity in Photo-Excited High-Resistivity GaAs
- Helical Dislocations and Dislocation Loops in silicon Induced by Platinum Diffusion
- Switching Time and I-V Characteristic of Cu-Doped Ge Diodes
- Comments on "Endotherm in Switch-on Process in Semiconducting Glasses
- Evidence for Ambipolar Conduction in Dye-Sensitized p-n Junctions of Langmuir-Blodgett Films
- Fabrication of Polar Structures by Use of LB Technique
- Photoelectrie Properties of Copper Phthalocyanine Langmuir-Blodgett Film
- Effects of Acid Vapor, Basic Vapor and Heat Treatments on the Properties of Langmuir-Blodgett Films of Divalent Metal Salts of Fatty Acids
- Generation of Large Dislocation Loops in Silicon Crystals
- Hexagonal Platelets Observed in Nickel Diffused Silicon
- Anomalous Etch Patterns in Highly Doped Silicon
- Infrared Observation of Anomalous Patterns in Highly Doped Silicon
- A Simlpler Method for Removing Copper from Germanium
- Generation of Scratch-Induced Dislocations in Silicon and Its Orientation Dependence
- Helical Dislocations in Highly Te-Doped GaAs Crystals
- Observation of Microplasma Pulses and Electroluminescence in Gallium Phosphide Single Crystal
- Visible Light Emission and Microplasma Phenomena in Silicon p-n Junction, I.
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films
- A New Model for the Carrier Transport in Amorphous Si: H Schottky Barrier Diodes : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES
- Observations of GaP Diffused Junctions
- Some Observations on Germanium Bi-crystals
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- Etch-Figure in CdS Single Crystals
- Electroluminescence in Gallium Phosphide Single Crystals
- Preparation of Gallium Phosphide Crystals and Their Etch Pattern
- Avalanche Breakdown in CdS Single Crystal
- Avalanche Electroluminescence in CdS Single Crystal
- A Simple Method for Measuring Capacity vs Voltage Characteristics of Reverse-Biased GaP Diffused Junctions
- Quenching Effect of the Photoconductivity Decay in CdS
- Photoconductivity of Cd-ZnS Mixed Crystal
- Carrier Transport in p^+-v Junction Based on Relaxation Semiconductors. II. Experiment
- Carrier Transport on p^+-v Junction Based on Relaxation Semiconductors. I. Theory
- Highly Sensitive Raman Spectroscopy by a Position-Sensitive Photomultiplier and a Triple-Stage Spectrograph with Stigmatic Optical Correction
- Visible Light Emission from Germanium Diffused p-n Junction
- Energy Gap Discrepancy in Amorphous Semiconductors of As-Te-Ge System
- Laser Beam Deflection with CdS Single Crystal
- Electrical Characterization of SrTiO3 Thin Films Grown on Nb-Doped SrTiO3 Single Crystals
- Observations of Negative Resistance and Oscillation Phenomena in the Forward Direction of Point Contact Semiconductor Diodes
- Current Oscillation in InSb Highly Sensitive to Magnetic Field
- Current Saturation and Undamped Oscillation in CdTe Single Crystals
- Observation of Coherent Oscillation in Germanium
- On the Backward Leakage Current in the Alloyed Germanium p-n Junction
- Observation of the Lateral Photovoltage by Surface Field Effect
- Some Experiments on the Germanium Surface Layer
- Transient Phenomena in the Backward Direction of Germanium Crystal Rectifiers
- Visible Light Emission and Microplasma Phenomena in Silicon p-n Junction : II. Classification of weak spots in diffused p-n junctions
- A Microscope Study of Etched Germanium Surfaces
- The "Sogicon" : A New Type of Semiconductor Oscillator
- Thermocompression Bonding to GaP Crystals
- Possible Evidence for the Light Induced Plasticity in Germanium
- Scanning Isothermal Current Transient Spectroscopy (SICTS) and Its Application to the Microscopic Distribution Measurement of Gap States in Hydrogenated Amorphous Silicon Films"
- Negative Resistance in the Forward Direction of Semiconductor Point Contact Diodes
- Coherent Oscillation from Forward-Biased Point Contact on Silicon Single Crystals
- Junction Properties and Gap States in Nb-Doped TiO_2 Thin Films
- Visible Light Emission from Metal-Silicon Contact
- Long Period Effects in Germanium Crystal Rectifiers
- Structure study of supermonomolecular layers in Langmuir-Blodgett films. Surface active squarylium dye-fatty acid binary mixed system.