Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films

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概要

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• Doping of Si:F:H and Si:H with P has been performed by a glow-discharge technique using PH_3/SiF_4+H_2, PF_5/SiF_4+H_2, PH_3/SiH_4+H_2 and PF_5/SiH_4+H_2 gaseous mixtures, and high conductive films over 10^0 Ω^<-1> cm^<-1> have been obtained. It has also been made clear from X-ray diffraction and Raman-scattering measurements that all the P-doped Si:F:H films (P/Si>5×10^<-4>) as well as high conductive Si:H films deposited under high RF power condition are polycrystalline, while Si:H films prepared under low power remain amorphous and their conductivity is less than 10^<-2> Ω^<-1>cm^<-1>. It is likely that film conductivity amounting to 10^0 Ω^<-1> cm^<-1> should be ascribed to its polycrystalline structure.

• 社団法人応用物理学会の論文
• 1980-06-05

著者

• Yamasaki Satoshi

  Joint Research Center For Atom Technology-national Institute For Advanced Interdisciplinary Research

• Yamasaki S

  National Inst. Advanced Interdisciplinary Res. Tsukuba Jpn

• MATSUDA Akihisa

  Electrotechnical Laboratory

• TANAKA Kazunobu

  Electrotechnical Laboratory

• OKUSHI Hideyo

  Electrotechnical Laboratory

• YAMASAKI Satoshi

  Electrotechnical Laboratory

• YAMASAKI Shuichi

  Superconducting Sensor Laboratory

• YAMAMOTO Hideo

  Electrotechnical Laboratory

• MATSUMURA Mitsuo

  TOA Nenryo Kogyo K.K.

• IIZIMA Sigeru

  Electrotechnical Laboratory

• YAMAMOTO Hideo

  TOA Nenryo K.K.

• Nakagawa Katsumi

  Electrotechnical Laboratory

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