Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films
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概要
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Doping of Si:F:H and Si:H with P has been performed by a glow-discharge technique using PH_3/SiF_4+H_2, PF_5/SiF_4+H_2, PH_3/SiH_4+H_2 and PF_5/SiH_4+H_2 gaseous mixtures, and high conductive films over 10^0 Ω^<-1> cm^<-1> have been obtained. It has also been made clear from X-ray diffraction and Raman-scattering measurements that all the P-doped Si:F:H films (P/Si>5×10^<-4>) as well as high conductive Si:H films deposited under high RF power condition are polycrystalline, while Si:H films prepared under low power remain amorphous and their conductivity is less than 10^<-2> Ω^<-1>cm^<-1>. It is likely that film conductivity amounting to 10^0 Ω^<-1> cm^<-1> should be ascribed to its polycrystalline structure.
- 社団法人応用物理学会の論文
- 1980-06-05
著者
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Yamasaki Satoshi
Joint Research Center For Atom Technology-national Institute For Advanced Interdisciplinary Research
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Yamasaki S
National Inst. Advanced Interdisciplinary Res. Tsukuba Jpn
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MATSUDA Akihisa
Electrotechnical Laboratory
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TANAKA Kazunobu
Electrotechnical Laboratory
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OKUSHI Hideyo
Electrotechnical Laboratory
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YAMASAKI Satoshi
Electrotechnical Laboratory
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YAMASAKI Shuichi
Superconducting Sensor Laboratory
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YAMAMOTO Hideo
Electrotechnical Laboratory
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MATSUMURA Mitsuo
TOA Nenryo Kogyo K.K.
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IIZIMA Sigeru
Electrotechnical Laboratory
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YAMAMOTO Hideo
TOA Nenryo K.K.
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Nakagawa Katsumi
Electrotechnical Laboratory
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