Comparative Evaluation of Ultrathin Mask Layers of SiO_2, SiO_x, and SiN_x for Selective Area Growth of Si

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-07-15

著者

• Yamasaki Satoshi

  Joint Research Center For Atom Technology-national Institute For Advanced Interdisciplinary Research

• YASUDA Tetsuji

  Joint Research Center for Atom Technology (JRCAT)

• Yamasaki S

  National Inst. Advanced Interdisciplinary Res. Tsukuba Jpn

• TANAKA Kazunobu

  Joint Research Center for Atom Technology(JRCAT)

• HWANG Doo-Sup

  Joint Research Center for Atom Technology-Angstrom Technology Partnership

• IKUTA Kazuyuki

  Joint Research Center for Atom Technology-National Institute for Advanced Interdisciplinary Research

• Yamasaki S

  Nec Corp. Kanagawa Jpn

• Yasuda T

  Joint Research Center For Atom Technology (jrcat)

• Yasuda Tetsuji

  Joint Research Center For Atom Technology(jrcat):national Institute For Advanced Interdisciplinary R

• Yasuda Tetsuji

  Joint Research Center For Atom Technolog (jrcat)

• YAMASAKI Shuichi

  Superconducting Sensor Laboratory

• Yasuda T

  Joint Research Center For Atom Technology(jrcat):national Institute For Advanced Interdisciplinary R

• Ikuta K

  Department Of Electronic Device Engineering Graduate School Of Information Science And Electrical En

• Yasuda Takeshi

  Department Of Applied Science For Electronics And Materials Graduate School Of Engineering Sciences

• Yamasaki Satoshi

  Joint Research Center For Atom Technology(jrcat):national Institute For Advanced Interdisciplinary R

• Tanaka Kazunobu

  Joint Research Center For Atom Technology (jrcat):national Institute For Advanced Interdisciplinary

• Yasuda Tsutomu

  Faculty Of Engineering Tokyo Institute Of Technology

• Yamasaki Satoshi

  Joint Research Center For Atom Technology (jrcat) National Institute For Advanced Interdisciplinary

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