Representative Figure Method for Proximity Effect Correction
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-03-15
著者
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Yamasaki Satoshi
Joint Research Center For Atom Technology-national Institute For Advanced Interdisciplinary Research
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Yamasaki S
National Inst. Advanced Interdisciplinary Res. Tsukuba Jpn
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Yamasaki S
Nec Corp. Kanagawa Jpn
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Abe Takayuki
Ulsi Research Center Toshiba Corp.
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YAMASAKI Shuichi
Superconducting Sensor Laboratory
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YAMASAKI Satoshi
ULSI research Center, Toshiba Corp.
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YOSHIKAWA Ryoichi
ULSI research Center, Toshiba Corp.
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TAKIGAWA Tadahiro
ULSI research Center, Toshiba Corp.
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Yoshikawa Ryoichi
Ulsi Research Laboratories Toshiba Corporation
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Takigawa T
Semiconductor Components Operations Dai Nippon Printing Co. Ltd.
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Takigawa Tadahiro
Ulsi Research Center Toshiba Corp
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Yoshikawa Ryoichi
Ulsi Research Center Toshiba Corporation
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Yamasaki Satoshi
ULSI Device Development Laboratories, NEC Corporation
関連論文
- In situ ESR Observation of Interface Dangling Bond Formation Processes During Ultrathin SiO2 Growth On Si(111)
- EPR studies of the isolated negatively charged silicon vacancies in n-type 4H- and 6H-SiC: Identification of C3v symmetry and silicon sites
- Electron Spin Resonance Observation of the Si(111)- (7×7) Surface and Its Oxidation Process
- Effects of Chemical Composition and Morphology of Substrate Surfaces on Crustallinity of Ultrathin Hydrogenated Microcrystalline Silicon Films
- Microscopic origin of light-induced ESR centers in undoped hydrogenated amorphous silicon
- Electron-spin-resonance center of dangling bonds in undoped a-Si:H
- Selective Area Growth of Si on Thin Insulating Layers for Nanostructure Fabrication
- Electronic Structure of Band-Tail Electrons in a Si:H
- Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
- A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si: H Films
- Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy
- Fabrication of High-Quality Nb/Al-AlO_x-Al/Nb Junctions by a Simple Process
- Fabrication and Evaluation of Superconducting Quantum Interference Devices with Nb/Al-AlO_x-Al/Nb Edge Junctions
- Performance Evaluation of Representative Figure Method for Proximity Effect Correction : Electron Beam Lithography
- Performance Evaluation of Representative Figure Method for Proximity Effect Correction
- Representative Figure Method for Proximity Effect Correction [II]
- Representative Figure Method for Proximity Effect Correction
- Hydrogen-Initiated Nucleation and Growth of Hydrogenated Amorphous Silicon on Graphite
- Substrate Temperature Dependence of Deuteron Bonding States in Deuterated Amorphous Silicon Studied by ^2H Nuclear Magnetic Resonance
- ^1H Nuclear Magnetic Resonance Study of Hydrogen Distribution in Partially Deuterated Hydrogenated Amorphous Silicon
- Structural Differences between Hydrogenated and Deuterated Amorphous Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
- The Staebler-Wronski Effect on Defect Luminescence in Hydrogenated Amorphous Silicon
- ^P Nuclear Magnetic Resonance Study of Local Bonding Configuration of Phosphorus in Amorphous Silicon-Hydrogen-Phosphorus Alloys
- Silicon-29 Nuclear Magnetic Resonance Study of Amorphous-Microcrystalline Mixed-Phase Hydrogenated Silicon
- Characteristics of Schottky Barrier Diodes in P-doped Amorphous Si : H : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- Anomalous Optical and Structural Properties of B-Doped a-Si:H
- Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption
- Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent
- Determination of the Density of State Distribution of a-Si: H by Isothermal Capacitance Transient Spectroscopy
- Structural Study on Amorphous-Microcrystalline Mixed-Phase Si:H Films
- Characteristics of Schottky Barrier Diodes in Reactively Sputtered Amorphous Si:H : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- Boron Doping of Hydrogenated Silicon Thin Films
- Fabrication of Micro-Marks for Electron-Beam Lithography
- Fabrication Process of Character Projection Mask for EB Lithography
- ^1H Nuclear Magnetic Resonance Study of Hydrogenated Amorphous Silicon Deposited from a Xe-diluted Silane Plasma
- High-Speed Convolution System for Real-Time Proximity Effect Correction
- Proximity Effect Correction For Electron Beam Lithography: Highly Accurate Correction Method
- Comparative Evaluation of Ultrathin Mask Layers of SiO_2, SiO_x, and SiN_x for Selective Area Growth of Si
- Electron Beam Calibration Method for Character Projection Exposure System EX-8D
- Patterning Accuracy Estimation of Electron Beam Direct-Writing System EX-8D
- The Effect of Down-Flow Cleaning Process on Materials Used in an Electron Beam System
- Triangular Shaped Beam Technique in EB Exposure System EX-7 for ULSI Pattern Formation : Lithography Technology
- Scanning Probe Microscopy and Lithography of Ultrathin Si_3N_4 Films Grown on Si(111) and Si(001)
- Main-Field Stitching Accuracy Analysis in Electron Beam Writing Systems
- A Soft X-Ray Microscope Using an Imaging Detector
- Particle Contamination Control Technology in Electron Beam Mask Writing System for Next-Generation Mask Fabrication
- Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition : Beam Induced Physics and Chemistry
- Estimation of the Density and Roughness of Thin Monolayer Films by Soft X-Ray Reflectivity Measurements
- Accuracy Evaluation of Representative Figure Method for Proximity Effect Correction
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films
- A New Model for the Carrier Transport in Amorphous Si: H Schottky Barrier Diodes : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES
- Shape Data Operations for VSB LB Data Conversion Using CAD Tools
- Triangular Shaped Beam Technique in EB Exposure System EX-7 for ULSI Pattern Formation
- Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition