Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-09-05
著者
-
Yamasaki Satoshi
Joint Research Center For Atom Technology-national Institute For Advanced Interdisciplinary Research
-
Yamasaki S
National Inst. Advanced Interdisciplinary Res. Tsukuba Jpn
-
MATSUDA Akihisa
Electrotechnical Laboratory
-
TANAKA Kazunobu
Electrotechnical Laboratory
-
Yamasaki S
Joint Res. Center For Atom Technol. (jrcat) Tsukuba Jpn
-
Hata N
Electrotechnical Lab. Ibaraki Jpn
-
Hata Nobuhiro
Electrotechnical Laboratory
-
OKUSHI Hideyo
Electrotechnical Laboratory
-
YAMASAKI Satoshi
Electrotechnical Laboratory
-
OHEDA Hidetoshi
Electrotechnical Laboratory
-
YAMASAKI Shuichi
Superconducting Sensor Laboratory
-
OHYAMA Hideaki
Electrotechnical laboratory
関連論文
- Characteristics of Superconducting Gd-Ba-Cu-O Thin Films
- Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method : Surfaces, Interfaces and Films
- Effect of Laser-Induced Dissociation during Measurements of Hydrogen Atoms in Silane Plasmas Using Two-Photon-Excited Laser-Induced Fluorescence
- In situ ESR Observation of Interface Dangling Bond Formation Processes During Ultrathin SiO2 Growth On Si(111)
- EPR studies of the isolated negatively charged silicon vacancies in n-type 4H- and 6H-SiC: Identification of C3v symmetry and silicon sites
- Electron Spin Resonance Observation of the Si(111)- (7×7) Surface and Its Oxidation Process
- Effects of Chemical Composition and Morphology of Substrate Surfaces on Crustallinity of Ultrathin Hydrogenated Microcrystalline Silicon Films
- Microscopic origin of light-induced ESR centers in undoped hydrogenated amorphous silicon
- Electron-spin-resonance center of dangling bonds in undoped a-Si:H
- Selective Area Growth of Si on Thin Insulating Layers for Nanostructure Fabrication
- Electronic Structure of Band-Tail Electrons in a Si:H
- Coherent Anti-Stokes Raman Spectroscopy of Radio-Frequency Discharge Plasmas of Silane and Disilane
- Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
- Detection of Neutral Species in Silane Plasma Using Coherent Anti-Stokes Raman Spectroscopy
- A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si: H Films
- Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy
- Effect of Light Soaking Temperature on the Metastable Defect Distribution in Magnetron Sputtered Hydrogenated Amorphous Silicon Films
- Fabrication of High-Quality Nb/Al-AlO_x-Al/Nb Junctions by a Simple Process
- Fabrication and Evaluation of Superconducting Quantum Interference Devices with Nb/Al-AlO_x-Al/Nb Edge Junctions
- n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition
- High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron
- Performance Evaluation of Representative Figure Method for Proximity Effect Correction : Electron Beam Lithography
- Performance Evaluation of Representative Figure Method for Proximity Effect Correction
- Representative Figure Method for Proximity Effect Correction [II]
- Representative Figure Method for Proximity Effect Correction
- Hydrogen-Initiated Nucleation and Growth of Hydrogenated Amorphous Silicon on Graphite
- Substrate Temperature Dependence of Deuteron Bonding States in Deuterated Amorphous Silicon Studied by ^2H Nuclear Magnetic Resonance
- ^2D and ^1H Nuclear Magnetic Resonance Study of Deuterated Amorphous Silicon and Partially Deuterated Hydrogenated Amorphous Silicon
- ^1H Nuclear Magnetic Resonance Study of Hydrogen Distribution in Partially Deuterated Hydrogenated Amorphous Silicon
- Structural Differences between Hydrogenated and Deuterated Amorphous Silicon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
- The Staebler-Wronski Effect on Defect Luminescence in Hydrogenated Amorphous Silicon
- ^P Nuclear Magnetic Resonance Study of Local Bonding Configuration of Phosphorus in Amorphous Silicon-Hydrogen-Phosphorus Alloys
- Silicon-29 Nuclear Magnetic Resonance Study of Amorphous-Microcrystalline Mixed-Phase Hydrogenated Silicon
- Characteristics of Schottky Barrier Diodes in P-doped Amorphous Si : H : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- Anomalous Optical and Structural Properties of B-Doped a-Si:H
- Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption
- Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent
- Determination of the Density of State Distribution of a-Si: H by Isothermal Capacitance Transient Spectroscopy
- Structural Study on Amorphous-Microcrystalline Mixed-Phase Si:H Films
- Characteristics of Schottky Barrier Diodes in Reactively Sputtered Amorphous Si:H : III-3: AMORPHOUS SOLAR CELLS : Device Physics
- Boron Doping of Hydrogenated Silicon Thin Films
- ^1H Nuclear Magnetic Resonance Study of Hydrogenated Amorphous Silicon Deposited from a Xe-diluted Silane Plasma
- Photodoping of Ag into Single Crystal As_2S_3
- Plasma Enhanced Chemical Vapour Deposition of Hydrogenated Amorphous Silicon from Dichlorosilane and Silane Gas Mixtures
- Annealing Energy Distribution of Light-Induced Defects of Hydrogenated Amorphous Silicon Films Grown from Silane and Dichlorosilane Gas Mixtures
- Comparison of Defect Annealing Kinetics of a-Si:H Prepared by Pure Silane and Helium Diluted Silane by Triode Plasma Chemical Vapour Deposition
- The Effect of Mesh Bias and Substrate Bias on the Properties of a-Si:H Deposited by Triode Plasma Chemical Vapour Deposition
- Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
- Comparative Evaluation of Ultrathin Mask Layers of SiO_2, SiO_x, and SiN_x for Selective Area Growth of Si
- Electrical Characterization of SrTiO_3 Thin Films Grown on Nb-Doped SrTiO_3 Single Crystals
- Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
- Spatial Distribution of SiH_3 Radicals in RF Silane Plasma
- SiH_3 Radical Density in Pulsed Silane Plasma
- Effect of Ion Bombardment on the Properties of Hydrogenated Amorphous Silicon Prepared from Undiluted and Xenon-Diluted Silane
- In Situ Ultraviolet Laser Treatment during Plasma Deposition for the Improvement of Film Qualities in Hydrogenated Amorphous Silicon
- The Isolated Se Chains in the Channels of Mordenite Crystal
- Nonlinear Effects Excitonic Emission from High Quality Homoepitaxial Diamond Films
- Junction Properties and Gap States of ZnO Thin Film Prepared by Sol-Get Process
- Preparation of n-ZnO/p-Si Heterojunction by Sol-Gel Process
- Photoconductivity and Photoaeoustie Spectra of Trigonal, Rhombohedral, Orthorhombic, and α-, β-, and γ-Monoclinic Selenium
- Absence of Correlation between Disorder and Defect Density in Hydrogenated Amorphous Silicon
- Effects of Electrode Distance on Plasma Parameters and a-Si:H Film Properties in Plasma CVD Process
- Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method
- Phase Shift Spectroscopy of Modulated Photocurrent: Its Application to Gold Levels in Crystalline Si
- Dependence of the Saturation of Light-Induced Defect Density in a-Si:H on Temperature and Light Intensity
- DLTS Measurement on Au-Doped Si p^+n Junctions and Its Computer Simulation
- Deep Levels Associated with Nitrogen in Silicon
- A Modulated DLTS Method for Large Signal Analysis (C^2-DLTS)
- Deep Levels in n-Type Undoped and Te-doped InSb Crystals
- Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level Parameters
- Scanning Probe Microscopy and Lithography of Ultrathin Si_3N_4 Films Grown on Si(111) and Si(001)
- Role of Hydrogen Atoms in the Formation Process of Hydrogenated Microcrystalline Silicon
- Comments on "Endotherm in Switch-on Process in Semiconducting Glasses
- Electrical Properties of Pulsed Laser Crystallized Silicon Films
- Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si-Ge Alloys from Glow-Discharge Plasma
- Importance of Charged Dangling Bonds in Explaining the Photodegradation Behavior of Amorphous Silicon Films Prepared by Various Techniques
- The Residual Photocurrent of Amorphous As_2Se_3
- Wide-Rrange Control of Crystallite Size and Its Orientation in Glow-Discharge Deposited μc-Si:H
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films
- A New Model for the Carrier Transport in Amorphous Si: H Schottky Barrier Diodes : II-3: AMORPHOUS SEMICONDUCTOR PHOTOVOLTAIC DEVICES
- Transient Carrier Transport in Relaxation Case GaAs
- Carrier Transport in p^+-v Junction Based on Relaxation Semiconductors. II. Experiment
- Carrier Transport on p^+-v Junction Based on Relaxation Semiconductors. I. Theory
- Highly Sensitive Raman Spectroscopy by a Position-Sensitive Photomultiplier and a Triple-Stage Spectrograph with Stigmatic Optical Correction
- Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method
- Effect of Ion Bombardment on the Growth and Properties of Hydrogenated Amorphous Silicon-Germanium Alloys
- Glow-Discharge Deposition of Amorphous Silicon from SiH_3F
- Influence of Power-Source Frequency on the Properties of GD a-Si:H
- Glow-Discharge Deposition of a-Si: H from Pure Si_2H_6 and Pure SiH_4
- Defect Formation Process during Growth of Hydrogenated Amorphous Silicon at High Temperatures
- Electrical Characterization of SrTiO3 Thin Films Grown on Nb-Doped SrTiO3 Single Crystals
- Control of defect density in a-Si : H by surface processes
- The Modulated Photocurrent of Amorphous As_2Se_3
- The Exponential Absorption Edge in Amorphous Ge-Se Compounds
- Scanning Isothermal Current Transient Spectroscopy (SICTS) and Its Application to the Microscopic Distribution Measurement of Gap States in Hydrogenated Amorphous Silicon Films"
- Junction Properties and Gap States in Nb-Doped TiO_2 Thin Films
- Electron and Ion Energy Controls in a Radio Frequency Discharge Plasma with Silane