The Residual Photocurrent of Amorphous As_2Se_3
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The residual photocurrent of amorphous As_2Se_3 after illumination is studied by varying the illumination time, the light intensity and temperature. The residual photocurrent depends only on the total number of the absorbed photons. In order to know the distribution of the photo-excited non-equilibrium carriers trapped on the local levels, the Fermi level analysis is applied to the decay curves after illumination with a 1000 nm light for one minute in the temperature range -20℃ to 38℃. The photo-excited non-equilibrium carriers form a distribution with a peak at about 0.54 ev above the valence band. Because the photocurrent decay is very slow even at room temperature, a part of these non-equilibrium carriers can Ice quenched by cooling the sample rapidly from 20℃ to -90℃ after illumination at room temperature.
- 社団法人応用物理学会の論文
- 1976-08-05
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