The Modulated Photocurrent of Amorphous As_2Se_3
スポンサーリンク
概要
- 論文の詳細を見る
In order to understand the reason for the different photoresponses of a-As_2Se_3 depending on the exciting photon energy and to separate individual components contained in the photoresponse, the modulated photocurrent for chopped light is measured by varying the chopping frequency. However, the modulated photocurrent decreases almost monotonically against the chopping frequency. This means that the localized levels distribute quasi-continuously. From the consideration about the temperature dependence of the modulated photocurrent, it is confirmed that the components which cause the photoresponse to be different depending on the exciting photon energy are the carrier generation processes containing the thermal release processes.
- 社団法人応用物理学会の論文
- 1977-11-05
著者
関連論文
- Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
- A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si: H Films
- Determination of the Optical Constants of Thin Films Using Photoacoustic Spectroscopy
- Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption
- Gap States Distribution of Undoped a-Si: H Determined with Phase-Shift Analysis of the Modulated Photocurrent
- Determination of the Density of State Distribution of a-Si: H by Isothermal Capacitance Transient Spectroscopy
- Phase Shift Spectroscopy of Modulated Photocurrent: Its Application to Gold Levels in Crystalline Si
- The Residual Photocurrent of Amorphous As_2Se_3
- The Modulated Photocurrent of Amorphous As_2Se_3
- The Exponential Absorption Edge in Amorphous Ge-Se Compounds