Photoluminescence in Ge-S Glasses
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1974-08-05
著者
-
ARAI Kazuo
Electrotechnical Laboratory
-
NAMIKAWA Hiroshi
Electrotechnical Laboratory
-
ITOH Uichi
Electrotechnical Laboratory
関連論文
- Improvement of SiO_2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing
- Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃
- Preparation of Nd-Doped SiO_2 Glasses by Axial Injection Plasma Torch CVD and Their Fluorescence Properties
- Fluorescence and its Nd^ Concentration Dependence of Nd-Doped SiO_2 Glasses Prepared by Plasma Torch CVD
- Preparation of Nd-Doped SiO_2 Glass by Plasma Torch CVD
- Photoluminescence in Ge-S Glasses
- The Residual Photocurrent of Amorphous As_2Se_3
- Effects of Densification on Electrical and Optical Properties of Chalcogenide Glasses
- Electrical Properties of Silver Doped As-Se Glasses
- Laser Emission from New Hydroxycoumarin Dyes
- Enhancement of Photoconduction by Detapping in Phenazine-Doped Anthracene Crystal
- Electrical Conduction of Anthracene Crystal
- Photoconduction in Phenazine Single Crystal
- Thin Film Dye Laser with a Double-Layered Structure
- Optical Gain of Coumarin Dye-Doped Thin Film Lasers