Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃

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概要

• 論文の詳細を見る
• 1998-09-07

著者

• SEKIGAWA Toshihiro

  Electrotechnical Laboratory

• Yoshikawa M

  Department Of Electronics University Of Osaka Prefecture

• Fukuda K

  Electrotechnical Lab. Ibaraki Jpn

• YOSHIKAWA Masayuki

  Plasma Research Center, University of Tsukuba

• Yoshikawa Masanobu

  Department Of Applied Physics Faculty Of Engineering Osaka University

• YOSHIKAWA Masahito

  Japan Atomic Energy Research Institute, Takasaki Radiation Chemistry Research Establishment

• YOSHIDA Sadafumi

  Electrotechnical Laboratory

• NAGAI Kiyoko

  Electrotechnical Laboratory

• Yoshikawa Masaaki

  Imra Material R &amp D Co Ltd.

• Sekigawa Toshihiro

  Electron Devices Division Electrotechnical Laboratory

• Sekigawa Toshihiro

  Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria

• Yoshikawa Masahito

  Japan Atomic Energy Research Institute

• ARAI Kazuo

  Electrotechnical Laboratory

• FUKUDA Kenji

  New Energy and Industrial Technology Development Organization

• Arai K

  Electrotechnical Laboratory

• Yoshikawa M

  Choshu Ind. Co. Ltd. Yamaguchi Jpn

• Yoshida S

  The Second Department Of Internal Medicine Chiba University School Of Medicine

• Nagai Kiyoko

  Electrotechnical Lab.

• Fukuda Kuniya

  Department Of Engineering Physics Faculty Of Engineering Kyoto University

• Sekigawa T

  Electron Devices Division Electrotechnical Laboratory

• Yoshida S

  Sharp Corp. Nara Jpn

• Yoshikawa Manabu

  Department Of Physics Faculty Of Science Yamaguchi University

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