Characteristics of Three-μm-Thick Silicon Solar Cells Using Bonded Silicon-on-Insulator Wafer
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概要
- 論文の詳細を見る
Three-μm-thick single-crystalline silicon solar cells were fabricated using a bonded silicon-on-insulator (SOI) wafer. The passivation effect due to the surface potential at the SOI layer/SiO_2 back interface was investigated. The surface potential was changed by externally applied voltages. When the SOI layer/SiO_2 back interface was in the accumulated condition, short-circuit current (I_<sc>) and open-circuit voltage (V_<oc>) were improved. Control of thesurface potential is, therefore, effective in realizing high-efficiency thin silicon solar cells.
- 社団法人応用物理学会の論文
- 1994-10-01
著者
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HAYASHI Yutaka
Electrotechnical Laboratory
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SEKIGAWA Toshihiro
Electrotechnical Laboratory
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Sekigawa Toshihiro
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
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TAKATO Hidetaka
Electrotechnical Laboratory
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YUI Naomasa
Electrotechnical Laboratory
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Hayashi Yutaka
Electrotechnical Laboratory:(present Address) Ulsi R & D Laboratories Semiconductor Company Sony
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