A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
スポンサーリンク
概要
- 論文の詳細を見る
- 2012-04-01
著者
-
Ishikawa Yuki
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
ENDO Kazuhiko
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
-
ENDO Kazuhiko
National Institute of Advanced Industrial Science and Technology
-
MASAHARA Meishoku
National Institute of Advanced Industrial Science and Technology
-
Yamauchi Hiromi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Nakagawa Tadashi
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
-
Sakamoto Kunihiro
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Masahara Meishoku
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Sekigawa Toshihiro
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
-
Sekigawa Toshihiro
Nanoelectronices Research Institute National Institute Of Advanced Science And Technology (aist)
-
Liu Yongxun
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Koike Hanpei
Electroinformatics Group Nanoelectronics Research Institute National Institute Of Advanced Industria
-
Koike Hanpei
Nanoelectronices Research Institute National Institute Of Advanced Science And Technology (aist)
-
Tsukada Junichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Matsukawa Takashi
Nanoelectronics Research Institute Aist
-
Liu Yongxun
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
O'uchi Shin-ichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
-
Nakagawa Tadashi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
-
Endo Kazuhiko
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
関連論文
- Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode
- Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
- Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
- Experimental Fabrication of XMOS Transistors Using Lateral Solid-Phase Epitaxy of CVD Silicon Films
- Phonon Assisted Tunneling and Peak-to-Valley Ratio in a Magnetically Confined Quasi Zero Dimensional InGaAs/InAlAs Resonant Tunneling Diode
- Fabrication of Four-Terminal Fin Field-Effect Transistors with Asymmetric Gate-Oxide Thickness Using an Anisotropic Oxidation Process with a Neutral Beam
- All-Solid-State, THz Radiation Source Using a Saturable Bragg Reflector in a Femtosecond Mode-Locked Laser
- Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates
- New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
- Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
- Low-Leakage-Current Ultra-thin SiO_2 Film by Low-Temperature Neutral Beam Oxidation
- Deoxidization of Cu Oxide under Extremely Low Oxygen Pressure Ambient
- Effects of Film Quality of Hydrogenated Amorphous Silicon Grown by Thermal Chemical-Vapor-Deposition on Subsequent in-situ Hydrogenation Processes
- Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons
- FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
- Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
- Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE)
- Vertical Ultrathin-channel Multi-gate MOSFETs (MuGFETs) : Technological Challenges and Future Developments
- Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate
- Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy
- Device Design Consideration for V_-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor
- Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
- Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
- Behaviors of surfactant atoms on Si(001) surface
- Improvement of SiO_2/4H-SiC Interface Using High-Temperature Hydrogen Annealing at Low Pressure and Vacuum Annealing
- Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃
- Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
- THz-radiation Generation from an Intracavity Saturable Bragg Reflector in a Magnetic Field
- Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
- Difference in Diffusion Length of Ga Atoms under As_2 and As_4 Flux in Molecular Beam Epitaxy
- Ultrafast Photoconductive Switches with a 43 nm Gap Fabricated Using an Atomic Force Microscope
- Fabrication of Quantum Wire Structures on Non-Planer InP Substrates by Molecular Beam Epitaxy (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Ultrafast Photoconductive Switches with a 43nm Gap Fabricated by an Atomic Force Microscope
- Electrooptic Vector Sampling : Measurement of Vector Components of Electric Field by the Polarization Control of Probe Light
- Optimization of the Body Bias Voltage Set (BBVS) for Flex Power FPGA(Reconfigurable Device and Design Tools,Reconfigurable Systems)
- Preliminary Evaluation of Flex Power FPGA : A Power Reconfigurable Architecture with Fine Granularity(Recornfigurable Systems)(Reconfigurable Systems)
- Formation of Very Thin Anodic Oxide of InSb
- Resonant Tunneling in Triple Barrier Diode under Pressure
- Raman Scattering Study on Unoxidized Antimony in Anodic Oxide-Films of InSb
- Resonant Magnetotunneling in AlGaAs/GaAs Triple Barrier Diodes : II. LOW TEMPERATURE PROPERTIES OF SOLIDS : Two Dimensional Electrons and Ions
- Miniband Base Transistor
- Sharp Resonance Characteristics in Triple-Barrier Diodes with a Thin Undoped Spacer Layer
- Phase-Locked Epitaxy Using RHEED Intensity Oscillation
- Mechanism of Tungsten Plug Corrosion during Chemical Stripping Process : Scanning Maxwell-Stress Microscopy and Electrochemical Potentiometry Studies
- Elongated shaped Si Island Formation on 3C-SiC by Chemical Vapor Deposition and Its Application to Antiphase Domain Observation
- Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition
- A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics
- Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy
- Characteristics of Three-μm-Thick Silicon Solar Cells Using Bonded Silicon-on-Insulator Wafer
- Surface Passivation of Thin Silicon Solar Cells Using Silicon-on-Insulator Wafer
- Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
- Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE)
- Experimental Study of Floating-Gate-Type MetalOxideSemiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application (Special Issue : Microprocesses and Nanotechnology)
- Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication
- A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
- Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics
- High-Frequency Precise Characterization of Intrinsic FinFET Channel
- A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
- Investigation of N-Channel Triple-Gate Metal–Oxide–Semiconductor Field-Effect Transistors on (100) Silicon On Insulator Substrate
- Device Design Consideration for $V_{\text{th}}$-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor
- Dual-Metal-Gate Transistors with Symmetrical Threshold Voltages Using Work-Function-Tuned Ta/Mo Bilayer Metal Gates
- Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
- Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes
- Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
- New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
- Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching
- P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs
- Demonstration and Analysis of Accumulation-Mode Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
- A Novel Process for Fabrication of Gated Silicon Field Emitter Array Taking Advantage of Ion Bombardment Retarded Etching
- Ultrafast Metal-Semiconductor-Metal Photoconductive Switches Fabricated Using an Atomic Force Microscope
- Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation
- 1/f Noise Characteristics of Fin-Type Field-Effect Transistors in Saturation Region
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories
- Programmable Conductivity of Silicon Nanowires with Side Gates by Surface Charging
- Independent-Double-Gate FinFET SRAM Technology
- Atomic Layer Deposition of SiO
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories (Special Issue : Microprocesses and Nanotechnology)
- Atomic Layer Deposition of SiO₂ for the Performance Enhancement of Fin Field Effect Transistors
- Difference in Diffusion Length of Ga Atoms under As2 and As4 Flux in Molecular Beam Epitaxy