New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
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概要
- 論文の詳細を見る
Ultrathin-channel formation of a vertical-type double-gate metal oxide semiconductor field effect transistor using a low-energy neutral-beam etching (NBE) is proposed. The NBE can completely eliminate charge buildup and photon radiation damage from the plasma. By optimizing NBE conditions, rectangular vertical channels were fabricated with a SiO2 hard mask under low-energy NBE conditions.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-30
著者
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MASAHARA Meishoku
National Institute of Advanced Industrial Science and Technology
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LIU Yongxun
National Institute of Advanced Industrial Science and Technology
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ISHII Kenichi
National Institute of Advanced Industrial Science and Technology
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TAKASHIMA Hidenori
National Institute of Advanced Industrial Science and Technology
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SUGIMATA Etsuro
National Institute of Advanced Industrial Science and Technology
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MATSUKAWA Takashi
National Institute of Advanced Industrial Science and Technology
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YAMAUCHI Hiromi
National Institute of Advanced Industrial Science and Technology
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ISHIKAWA Yuki
National Institute of Advanced Industrial Science and Technology
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SUZUKI Eiichi
National Institute of Advanced Industrial Science and Technology
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Samukawa Seiji
Institute Of Fluid Science Tohoku University
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Ozaki Takuya
Institute Of Fluid Science Tohoku University
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Endo Kazuhiko
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Noda Shuichi
Institute Of Fluid Science Tohoku University
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Yamauchi Hiromi
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Masahara Meishoku
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Liu Yongxun
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Matsukawa Takashi
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Suzuki Eiichi
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Ishikawa Yuki
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Samukawa Seiji
Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8557, Japan
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Ishii Kenichi
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Sugimata Etsuro
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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