Irradiation-Damages in Atmospheric Plasma Used in a Resist Ashing Process for Thin Film Transistors

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概要

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• We used an on-wafer UV photon monitor to measure the amount of UV photon irradiation on the substrate surface of a thin film transistor (TFT) device in N2/O2 atmospheric plasma. We found that the amount of UV photon irradiation on the surface strongly depended on the ratio of N2 to O2 in the plasma. On the other hand, no irradiation of charged particles was observed by using this method. Additionally, we used TFTs with a single drain (SD) and lightly doped drain (LDD) structures as well as UV filters of slide glass (transparent above 280 nm) and synthetic quarts (transparent above 170 nm) to investigate the degradation of the TFTs. We found that UV photon irradiation significantly degraded TFT electrical characteristics in atmospheric plasma. An on-current decrease was observed only for LDD TFT when UV wavelength below 280 nm was irradiated. On the other hand, we observed an off-current increase for both types of TFT when UV light with a wavelength of less than 170 nm was irradiated. We will discuss a possible mechanism of the degradation.

• 2009-03-25

著者

• Samukawa Seiji

  Institute Of Fluid Science Tohoku University

• Kubota Tomohiro

  Institute Of Fluid Science Tohoku University

• Ueno Akira

  Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Uraoka Yukiharu

  Graduate School of Material Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan

• Sato Taiki

  Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Yara Takuya

  NBO Development Center, Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba, Ibaraki 300-4292, Japan

• Miyamoto Eiji

  NBO Development Center, Sekisui Chemical Co., Ltd., 32 Wadai, Tsukuba, Ibaraki 300-4292, Japan

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