Electron Emission from Indium Tin Oxide/Silicon Monoxide/Gold Structure
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概要
- 論文の詳細を見る
A field-emission cathode based upon the increase in the number of allowed conductive energy states in the silicon monoxide (SiO) forbidden gap as well as the increase in the number of interfacial states by indium tin oxide (ITO) ion diffusion into the SiO layer and silicon ion diffusion into the ITO layer while deposition is verified experimentally for the first time. This relatively low-cost electron emitter consists of an ITO layer sputtered on Pyrex glass, followed by an E-beam-evaporated silicon monoxide layer. The emitting layer is gold, deposited on the top of the silicon monoxide. Using ITO as a ground plate, instead of other previously published materials, a significant electron emission enhancement occurred.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-03-15
著者
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Samukawa Seiji
Institute Of Fluid Science Tohoku University
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Esashi Masayoshi
New Industry Creation Hatchery Center Tohoku Univ.
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Totsu Kentaro
Graduate School Of Engineering Tohoku University
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Kumagai Shinya
Institute Of Fluid Science Tohoku University
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Mourad Magdy
Graduate School of Engineering, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-857
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Mourad Magdy
Graduate School Of Engineering Tohoku University
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Esashi Masayoshi
New Industry Creation Hatchery Center (niche) Tohoku University
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